FF2MR12KM1HP is a 62 mm C-Series CoolSiC™ MOSFET module with a 1200 V drain-source voltage rating, a continuous DC drain current of 350 A at 65 °C case temperature, and a peak drain current of 420 A. It features pre-applied thermal interface material, an insulated base plate with 4 kV AC dielectric strength for 60 seconds, a 29.0 mm creepage distance between terminal and heat sink, a maximum base plate operating temperature of 125 °C, an internal inductance of 20 nH, and a chip-to-terminal resistance of 0.475 mΩ at 25 °C. It complies with IEC 60747, IEC 60749, and IEC 60068 for industrial applications.
62 mm CoolSiC™ MOSFET half bridge module 1200 V, 2.1 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM).
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| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FF2MR12KM1HP |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Modules - FF2MR12KM1HP |
| Transistor Technology / Material | Silicon carbide |
