Infineon Technologies AG IGBT Modules DF100R07W1H5FP_B53

Description
EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5, CoolSiC™ Schottky diode, PressFIT contact technology and pre-applied Thermal Interface Material. Summary of Features Increased blocking voltage capability up to 650V Low switching losses Low inductive design Al 2O 3 Substrate with low thermal resistance Integrated NTC temperature sensor Benefits Compact module concept Optimized customer’s development cycle time and cost Configuration flexibility Potential Applications Solutions for solar energy systems Applications 1-phase string inverter solutions Energy Storage Systems
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Description
EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5, CoolSiC™ Schottky diode, PressFIT contact technology and pre-applied Thermal Interface Material. Summary of Features Increased blocking voltage capability up to 650V Low switching losses Low inductive design Al 2O 3 Substrate with low thermal resistance Integrated NTC temperature sensor Benefits Compact module concept Optimized customer’s development cycle time and cost Configuration flexibility Potential Applications Solutions for solar energy systems Applications 1-phase string inverter solutions Energy Storage Systems
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Modules - DF100R07W1H5FP_B53 - Infineon Technologies AG
Neubiberg, Germany
EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5, CoolSiC™ Schottky diode, PressFIT contact technology and pre-applied Thermal Interface Material. Summary of Features Increased blocking voltage capability up to 650V Low switching losses Low inductive design Al 2O 3 Substrate with low thermal resistance Integrated NTC temperature sensor Benefits Compact module concept Optimized customer’s development cycle time and cost Configuration flexibility Potential Applications Solutions for solar energy systems Applications 1-phase string inverter solutions Energy Storage Systems

EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5, CoolSiC™ Schottky diode, PressFIT contact technology and pre-applied Thermal Interface Material.


Summary of Features

  • Increased blocking voltage capability up to 650V
  • Low switching losses
  • Low inductive design
  • Al 2O 3 Substrate with low thermal resistance
  • Integrated NTC temperature sensor

Benefits

  • Compact module concept
  • Optimized customer’s development cycle time and cost
  • Configuration flexibility

Potential Applications

  • Solutions for solar energy systems

Applications

  • 1-phase string inverter solutions
  • Energy Storage Systems
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number DF100R07W1H5FP_B53
Product Name IGBT Modules
IC(max) 100 amps
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