Infineon Technologies AG IGBT Modules DF300R12KE3

Description
IGBT Modules 1200V 300A DUAL
Description
IGBT Modules 1200V 300A DUAL
Datasheet
Datasheet Summary
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The DF300R12KE3 is an IGBT module designed for high-power switching applications, featuring a 1200 V collector-emitter voltage rating and a continuous collector current of 300 A at 80°C. It is packaged in a module with a case-to-heatsink thermal resistance of 0.010 K/W, and operates within a junction temperature range of -40°C to 125°C. The module incorporates an integrated free-wheel diode and a chopper diode, with a maximum junction temperature of 150°C. The device has a module stray inductance of 20 nH and an insulation test voltage of 2.5 kV RMS. Internal insulation uses Al₂O₃ with a comparative tracking index of 425. Mounting torque for mechanical fasteners is 3.0 to 6.0 Nm, and terminal connection torque is 2.5 to 5.0 Nm. The module weighs 340 g.

Datasheet Summary
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The DF300R12KE3 is an IGBT module designed for high-power switching applications, featuring a 1200 V collector-emitter voltage rating and a continuous collector current of 300 A at 80°C. It is packaged in a module with a case-to-heatsink thermal resistance of 0.010 K/W, and operates within a junction temperature range of -40°C to 125°C. The module incorporates an integrated free-wheel diode and a chopper diode, with a maximum junction temperature of 150°C. The device has a module stray inductance of 20 nH and an insulation test voltage of 2.5 kV RMS. Internal insulation uses Al₂O₃ with a comparative tracking index of 425. Mounting torque for mechanical fasteners is 3.0 to 6.0 Nm, and terminal connection torque is 2.5 to 5.0 Nm. The module weighs 340 g.

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Sheung Wan, Hong Kong
IGBT Modules
DF300R12KE3
IGBT Modules DF300R12KE3
IGBT Modules 1200V 300A DUAL

IGBT Modules 1200V 300A DUAL

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number DF300R12KE3
Product Name IGBT Modules
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