Infineon Technologies AG IGBT Modules DF400R12KE3

Description
IGBT Modules N-CH 1.2KV 580A
Description
IGBT Modules N-CH 1.2KV 580A
Datasheet
Datasheet Summary
Powered by GS/AI

The DF400R12KE3 is a 62mm C-series IGBT module with a trench/fieldstop IGBT3 and emitter-controlled diode, designed for brake-chopper applications. It has a collector-emitter voltage rating of 1200 V and a continuous collector current of 400 A. The module has a maximum power dissipation of 2000 W at 25°C case temperature. The gate-emitter voltage is rated at ±20 V, with an internal gate resistor of 1.9 Ω. Thermal resistance from junction to case is 0.11 K/W for the diode and 0.12 K/W for the IGBT. The package has a copper baseplate with 2500 V RMS isolation, a creepage distance of 22 mm, and a clearance of 21 mm. It is rated for storage temperatures from -40°C to 125°C and weighs 340 g.

Datasheet Summary
Powered by GS/AI

The DF400R12KE3 is a 62mm C-series IGBT module with a trench/fieldstop IGBT3 and emitter-controlled diode, designed for brake-chopper applications. It has a collector-emitter voltage rating of 1200 V and a continuous collector current of 400 A. The module has a maximum power dissipation of 2000 W at 25°C case temperature. The gate-emitter voltage is rated at ±20 V, with an internal gate resistor of 1.9 Ω. Thermal resistance from junction to case is 0.11 K/W for the diode and 0.12 K/W for the IGBT. The package has a copper baseplate with 2500 V RMS isolation, a creepage distance of 22 mm, and a clearance of 21 mm. It is rated for storage temperatures from -40°C to 125°C and weighs 340 g.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
IGBT Modules
DF400R12KE3
IGBT Modules DF400R12KE3
IGBT Modules N-CH 1.2KV 580A

IGBT Modules N-CH 1.2KV 580A

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number DF400R12KE3
Product Name IGBT Modules
Unlock Full Specs
to access all available technical data