Infineon Technologies AG IGBT Modules DF1000R17IE4D_B2

Description
IGBT Modules
Description
IGBT Modules
Datasheet
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The DF1000R17IE4D_B2 is a PrimePACK™3 IGBT module designed for high-power applications such as motor drives, traction converters, and wind turbines. It features a copper base plate and is rated for a continuous collector current of 1000 A and a peak collector current of 2000 A, with a maximum collector-emitter voltage of 1700 V. The module supports an extended junction operating temperature of 150°C and includes an integrated NTC temperature sensor. The IGBT and diode components are optimized for regenerative operation, with low switching losses and a low saturation voltage. The package provides a creepage and clearance distance exceeding 400 V and is rated for high power and thermal cycling. Thermal resistance from junction to case is 0.015 K/W for the IGBT and 0.012 K/W for the diode.

Datasheet Summary
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The DF1000R17IE4D_B2 is a PrimePACK™3 IGBT module designed for high-power applications such as motor drives, traction converters, and wind turbines. It features a copper base plate and is rated for a continuous collector current of 1000 A and a peak collector current of 2000 A, with a maximum collector-emitter voltage of 1700 V. The module supports an extended junction operating temperature of 150°C and includes an integrated NTC temperature sensor. The IGBT and diode components are optimized for regenerative operation, with low switching losses and a low saturation voltage. The package provides a creepage and clearance distance exceeding 400 V and is rated for high power and thermal cycling. Thermal resistance from junction to case is 0.015 K/W for the IGBT and 0.012 K/W for the diode.

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Sheung Wan, Hong Kong
IGBT Modules
DF1000R17IE4D_B2
IGBT Modules DF1000R17IE4D_B2
IGBT Modules

IGBT Modules

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number DF1000R17IE4D_B2
Product Name IGBT Modules
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