Infineon Technologies AG IGBT Modules DF900R12IP4DVBOSA1

Description
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel
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Description
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - DF900R12IP4DVBOSA1 - Rochester Electronics
Newburyport, MA, United States
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel

Supplier's Site Datasheet
IGBT Modules - DF900R12IP4DVBOSA1-ND - DigiKey
Thief River Falls, MN, United States
IGBT Module Trench Field Stop Single Chopper 1200V 900A 5100W Chassis Mount Module

IGBT Module Trench Field Stop Single Chopper 1200V 900A 5100W Chassis Mount Module

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Discrete Semiconductor Products - Transistors - IGBTs - DF900R12IP4DVBOSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
DF900R12IP4DVBOSA1
Discrete Semiconductor Products - Transistors - IGBTs DF900R12IP4DVBOSA1
IGBT MOD 1200V 900A 5100W

IGBT MOD 1200V 900A 5100W

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number DF900R12IP4DVBOSA1 DF900R12IP4DVBOSA1-ND DF900R12IP4DVBOSA1
Product Name IGBT Modules Discrete Semiconductor Products - Transistors - IGBTs
Package Type AG-PRIME2-411 Module
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