DD1600S33HE4 is an IHM-B module containing seven diodes, designed for medium-voltage converters, motor drives, rail traction, UPS systems, and wind turbines. It features a 3300 V peak repetitive reverse voltage rating and a continuous DC current of 1600 A, with a peak repetitive forward current of 3200 A. The module has an AlSiC base plate, an isolated substrate, and a packaging material with a comparative tracking index greater than 600. Its electrical insulation withstands 6.0 kV AC for one minute, with a partial discharge voltage of 2.6 kV. The junction-to-case thermal resistance is 20.1 K/kW, and the case-to-heatsink thermal resistance is 8.50 K/kW per diode. Operating junction temperature ranges from -40 °C to 150 °C. The module measures 130 mm in height and 140 mm in width, according to standard IHM-B packaging dimensions, and weighs 800 g. It complies with IEC 60747, IEC 60749, and IEC 60068 for industrial applications.
IHV B 3300 V, 1600 A 130 mm diode IGBT module with EC4 - Diode. The best solution for your transportation and industry applications and predestined to be combined with IGBT4 IHV B 3300 V products.
Summary of Features
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Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | DD1600S33HE4 |
| Product Name | Power - IGBT - IGBT Modules - DD1600S33HE4 |
| VCES | 3300 volts |
