Infineon Technologies AG Single FETs, MOSFETs BUZ31 E3046

N-channel enhancement mode MOSFET for switching applications, rated for 200 V drain-source voltage and 14.5 A continuous drain current at 30°C. Packaged in a PG-TO-220-3 through-hole case with a maximum power dissipation of 95 W at 25°C. Features avalanche endurance with single-pulse energy of 200 mJ and periodic avalanche energy of 9 mJ. Operating junction temperature range is -55°C to +150°C. Thermal resistance from junction to case is 1.32 K/W. Meets DIN 40 040 E humidity category and IEC climatic category 55/150/56. ESD sensitivity rated as HBM Class 1 per MIL-STD-883.