Infineon Technologies AG IGBT BUP314D

Description
DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 42A I(C), 1200V V(BR)CES, N-CHANNEL, WITH BUILT IN DIODE, TO-218. FREE 2 YEAR RADWELL WARRANTY
Description
DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 42A I(C), 1200V V(BR)CES, N-CHANNEL, WITH BUILT IN DIODE, TO-218. FREE 2 YEAR RADWELL WARRANTY

Suppliers

Company
Product
Description
Supplier Links
IGBT - 27082939 - Radwell International
Willingboro, NJ, United States
DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 42A I(C), 1200V V(BR)CES, N-CHANNEL, WITH BUILT IN DIODE, TO-218. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 42A I(C), 1200V V(BR)CES, N-CHANNEL, WITH BUILT IN DIODE, TO-218. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 27082939
Product Name IGBT
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