Infineon Technologies AG Channel Type Infineon BSZ065N03LSATMA1.

Description
Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:26W; No. of Pins:8Pins RoHS Compliant: Yes
Description
Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:26W; No. of Pins:8Pins RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The BSZ065N03LSATMA1 is an N-channel MOSFET designed for high-performance buck converters in server and VGA applications. It is packaged in a PG-TSDSON-8 (fused leads) case and is RoHS compliant and halogen-free according to IEC 61249-2-21. The device has a maximum continuous drain current of 40 A at 25 °C with V_GS = 10 V, a drain-source on-resistance of 6.5 mΩ max at V_GS = 10 V and 8.6 mΩ max at V_GS = 4.5 V, and a drain-source breakdown voltage of 30 V. It is 100% avalanche tested with a single-pulse avalanche energy rating of 16 mJ. The thermal resistance from junction to case is 4.9 K/W, and the operating and storage temperature range is -55 °C to 150 °C. The part is qualified according to JEDEC standards for target applications.

Datasheet Summary
Powered by GS/AI

The BSZ065N03LSATMA1 is an N-channel MOSFET designed for high-performance buck converters in server and VGA applications. It is packaged in a PG-TSDSON-8 (fused leads) case and is RoHS compliant and halogen-free according to IEC 61249-2-21. The device has a maximum continuous drain current of 40 A at 25 °C with V_GS = 10 V, a drain-source on-resistance of 6.5 mΩ max at V_GS = 10 V and 8.6 mΩ max at V_GS = 4.5 V, and a drain-source breakdown voltage of 30 V. It is 100% avalanche tested with a single-pulse avalanche energy rating of 16 mJ. The thermal resistance from junction to case is 4.9 K/W, and the operating and storage temperature range is -55 °C to 150 °C. The part is qualified according to JEDEC standards for target applications.

Suppliers

Company
Product
Description
Supplier Links
Channel Type Infineon - 29AC2880 - Newark, An Avnet Company
Chicago, IL, United States
Channel Type Infineon
29AC2880
Channel Type Infineon 29AC2880
Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:26W; No. of Pins:8Pins RoHS Compliant: Yes

Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:26W; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 29AC2880
Product Name Channel Type Infineon
Package Type TO-3
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