The DD200S33K2C is an IGBT module designed for high-power switching applications. It features an AlSiC baseplate and AlN internal insulation, with a mounting height of 33.2 mm and a clearance of 19.1 mm. The module has a maximum isolation voltage of 6.0 kV RMS and a continuous collector current rating of 200 A. The case temperature range is from -40°C to 125°C, and the device weighs 500 g. Terminal connections use M5 and M6 screws with torque values of 3.6-4.2 Nm and 4.25-5.75 Nm respectively. The thermal resistance from junction to case is 0.78 mK/W, and the reverse recovery time is 10.0 µs.
DD200S33K2 - IGBT Module
| Rochester Electronics | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | DD200S33K2CC1NOSA1 |
| Package Type | Module |
