Infineon Technologies AG IGBT Modules DF150R12RT4

Description
IGBT Modules IGBT MODULES 1200V 150A
Description
IGBT Modules IGBT MODULES 1200V 150A
Datasheet
Datasheet Summary
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The DF150R12RT4 is a 34mm IGBT module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology, designed for high-frequency switching and motor drives. It has a collector-emitter voltage rating of 1200 V, a nominal collector current of 150 A, and a peak collector current of 300 A. The maximum junction operating temperature is 150°C, with low switching losses and a positive temperature coefficient for VCEsat. The module features an isolated base plate and operates with a gate-emitter voltage range of ±20 V. Total power dissipation is 790 W at 25°C case temperature.

Datasheet Summary
Powered by GS/AI

The DF150R12RT4 is a 34mm IGBT module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology, designed for high-frequency switching and motor drives. It has a collector-emitter voltage rating of 1200 V, a nominal collector current of 150 A, and a peak collector current of 300 A. The maximum junction operating temperature is 150°C, with low switching losses and a positive temperature coefficient for VCEsat. The module features an isolated base plate and operates with a gate-emitter voltage range of ±20 V. Total power dissipation is 790 W at 25°C case temperature.

Suppliers

Company
Product
Description
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Sheung Wan, Hong Kong
IGBT Modules
DF150R12RT4
IGBT Modules DF150R12RT4
IGBT Modules IGBT MODULES 1200V 150A

IGBT Modules IGBT MODULES 1200V 150A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number DF150R12RT4
Product Name IGBT Modules
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