EasyPACK™ 650 V IGBT module with integrated CoolSiC™ Schottky diode and PressFIT contact technology, featuring a TRENCHSTOP™ 5 H5 IGBT transistor. The module has a maximum collector-emitter voltage of 650 V, a continuous collector current of 20 A, and a peak collector current of 80 A. The integrated diode supports a maximum reverse voltage of 650 V and a continuous forward current of 30 A. The module includes an integrated NTC thermistor with a resistance of 5 kΩ at 25 °C and uses an Al₂O₃ substrate. It is rated for an operating junction temperature range of -40 °C to 150 °C and complies with IEC 60286-3 and UL 94 V-0 standards. The package dimensions include a creepage distance of 16.35 mm and a clearance of 15.00 mm, with a weight of 23 g.
EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5, CoolSiC™ Schottky diode, PressFIT contact technology and pre-applied Thermal Interface Material.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | DF80R07W1H5FP_B11 |
| Product Name | IGBT Modules |
| IC(max) | 80 amps |
