Infineon Technologies AG IGBT Modules DF80R07W1H5FP_B11

Description
EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5, CoolSiC™ Schottky diode, PressFIT contact technology and pre-applied Thermal Interface Material. Summary of Features Increased blocking voltage capability up to 650 V Low switching losses Low inductive design Al 2O3 Substrate with low thermal resistance Integrated NTC temperature sensor Benefits Compact module concept Optimized customer’s development cycle time and cost Configuration flexibility Applications 1-phase string inverter solutions Photovoltaic
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Description
EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5, CoolSiC™ Schottky diode, PressFIT contact technology and pre-applied Thermal Interface Material. Summary of Features Increased blocking voltage capability up to 650 V Low switching losses Low inductive design Al 2O3 Substrate with low thermal resistance Integrated NTC temperature sensor Benefits Compact module concept Optimized customer’s development cycle time and cost Configuration flexibility Applications 1-phase string inverter solutions Photovoltaic
Request a Quote Datasheet

Suppliers

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Product
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IGBT Modules - DF80R07W1H5FP_B11 - Infineon Technologies AG
Neubiberg, Germany
IGBT Modules
DF80R07W1H5FP_B11
IGBT Modules DF80R07W1H5FP_B11
EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5, CoolSiC™ Schottky diode, PressFIT contact technology and pre-applied Thermal Interface Material. Summary of Features Increased blocking voltage capability up to 650 V Low switching losses Low inductive design Al 2O3 Substrate with low thermal resistance Integrated NTC temperature sensor Benefits Compact module concept Optimized customer’s development cycle time and cost Configuration flexibility Applications 1-phase string inverter solutions Photovoltaic

EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5, CoolSiC™ Schottky diode, PressFIT contact technology and pre-applied Thermal Interface Material.


Summary of Features

  • Increased blocking voltage capability up to 650 V
  • Low switching losses
  • Low inductive design
  • Al 2O3 Substrate with low thermal resistance
  • Integrated NTC temperature sensor

Benefits

  • Compact module concept
  • Optimized customer’s development cycle time and cost
  • Configuration flexibility

Applications

  • 1-phase string inverter solutions
  • Photovoltaic
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number DF80R07W1H5FP_B11
Product Name IGBT Modules
IC(max) 80 amps
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