MOSFET N-CH 150V 112A TO220-3 Product overview: IPP076N15N5AKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 112A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 112A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP076N15N5AKSA1
N-Channel 150V 112A (Tc) 214W (Tc) Through Hole PG-TO220-3
Win Source Part Number: 1153709-IPP076N15N5A
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™ 5
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Power Dissipation (Max): 214W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPP076N15N5;
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001180658
Base Product Number: IPP076
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
MOSFET, N-CH, 150V, 112A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:112A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Power RoHS Compliant: Yes
MOSFET N-CH 150V 112A TO220-3
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPP076N15N5AKSA1 | 2144409P | 2144409 | 448-IPP076N15N5AKSA1-ND | 1153709-IPP076N15N5AKSA1 | 45AC7167 | IPP076N15N5AKSA1 | IPP076N15N5AKSA1 |
| Product Name | 150V 112A TO220 MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 150V, 112A, To-220-3; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 150 volts | |||||||
| Transconductance | 0.0450 kS | |||||||
| PD | 214 milliwatts | 214000 milliwatts |
