Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP60R165CP IPP60R165CP

Manufacturer: Infineon Technologies
Win Source Part Number: 069071-IPP60R165CP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 192W (Tc)
Family Name: IPP60R165CP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 790μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 2000pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 165 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): STP28NM60ND; STP34NM60ND; STP20NM60FD;
Introduction Date: September 01, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

21A, 600V, 0.165OHM, N-CHANNEL M

MOSFETs N-Ch 650V 21A TO220-3 CoolMOS CP Product overview: IPP60R165CP from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 21A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 21A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP60R165CP can be used for catalog matching and distributor lookup.