Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP600N25N3G IPP600N25N3G

Manufacturer: Infineon Technologies
Win Source Part Number: 069067-IPP600N25N3G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO220-3-1
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 4V @ 90μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 2350pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

MOSFET N-CH 250V 25A TO220-3 Product overview: IPP600N25N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 25A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 25A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP600N25N3G can be used for catalog matching and distributor lookup.