Infineon Technologies AG N-Channel Through-Hole 60 V 120A MOSFET Transistor IPP024N06N3G

POWER FIELD-EFFECT TRANSISTOR, 1 / N-Channel 60 V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3-1 Product overview: IPP024N06N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Through-Hole, 60 V, 120A, 250W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 60 V, 120A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP024N06N3G can be used for catalog matching and distributor lookup.

Win Source Part Number: 1352839-IPP024N06N3G
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 33 pct.
Mfr: Infineon Technologies
Series: OptiMOS™ 3
Package: Bulk
Product Status: Active
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
Power Dissipation (Max): 250W (Tc)
Mounting Type: Through Hole
HTSUS: 8542.39.0001