Infineon Technologies AG MOSFET IPP100N08S2-07

Description
MOSFET N-Ch 75V 100A TO220-3 OptiMOS
Description
MOSFET N-Ch 75V 100A TO220-3 OptiMOS
Datasheet
Datasheet Summary
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IPP100N08S2-07 is an N-channel MOSFET in a PG-TO220-3-1 package, rated for 75 V drain-source voltage and 100 A continuous drain current at 25 °C. It has a maximum on-state resistance of 6.8 mΩ, operates up to 175 °C, and is AEC-Q101 qualified. The device is 100% avalanche tested with a single-pulse avalanche energy of 810 mJ at 80 A, features a gate-source voltage range of ±20 V, and is available in a lead-free, Green package. Thermal resistance from junction to case is 0.5 K/W.

Datasheet Summary
Powered by GS/AI

IPP100N08S2-07 is an N-channel MOSFET in a PG-TO220-3-1 package, rated for 75 V drain-source voltage and 100 A continuous drain current at 25 °C. It has a maximum on-state resistance of 6.8 mΩ, operates up to 175 °C, and is AEC-Q101 qualified. The device is 100% avalanche tested with a single-pulse avalanche energy of 810 mJ at 80 A, features a gate-source voltage range of ±20 V, and is available in a lead-free, Green package. Thermal resistance from junction to case is 0.5 K/W.

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Sheung Wan, Hong Kong
MOSFET N-Ch 75V 100A TO220-3 OptiMOS

MOSFET N-Ch 75V 100A TO220-3 OptiMOS

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP100N08S2-07
Product Name MOSFET
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