Infineon Technologies AG MOSFETs IPP60R160P6XKSA1

Description
Infineon MOSFET IPP60R160P6XKSA1
Request a Quote Datasheet
Description
Infineon MOSFET IPP60R160P6XKSA1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 2149092 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2149092
MOSFETs 2149092
Infineon MOSFET IPP60R160P6XKSA1

Infineon MOSFET IPP60R160P6XKSA1

Supplier's Site
MOSFETs - 2149093 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2149093
MOSFETs 2149093
Infineon MOSFET IPP60R160P6XKSA1

Infineon MOSFET IPP60R160P6XKSA1

Supplier's Site
MOSFETs - 2149093P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2149093P
MOSFETs 2149093P
Infineon MOSFET IPP60R160P6XKSA1

Infineon MOSFET IPP60R160P6XKSA1

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324687-IPP60R160P6XKSA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324687-IPP60R160P6XKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324687-IPP60R160P6XKSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1324687-IPP60R160P6X KSA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4.5V @ 750µA Power Dissipation (Max): 176W (Tc) Supplier Device Package: PG-TO220-3 Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-220-3 ECCN: EAR99 Fake Threat In the Open Market: 79 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: SP001017068 Base Product Number: IPP60R160 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: Infineon Technologies
Win Source Part Number: 1324687-IPP60R160P6XKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 50
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Power Dissipation (Max): 176W (Tc)
Supplier Device Package: PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-220-3
ECCN: EAR99
Fake Threat In the Open Market: 79
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SP001017068
Base Product Number: IPP60R160
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - IPP60R160P6XKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPP60R160P6XKSA1-ND
Single FETs, MOSFETs IPP60R160P6XKSA1-ND
N-Channel 600V 23.8A (Tc) 176W (Tc) Through Hole PG-TO220-3

N-Channel 600V 23.8A (Tc) 176W (Tc) Through Hole PG-TO220-3

Buy Now Datasheet
Singapore
600V 23.8A TO220 MOSFET Transistor
278-IPP60R160P6XKSA1
600V 23.8A TO220 MOSFET Transistor 278-IPP60R160P6XKSA1
MOSFET N-CH 600V 23.8A TO220-3 Product overview: IPP60R160P6XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 23.8A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 23.8A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP60R160P6XKSA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 23.8A TO220-3 Product overview: IPP60R160P6XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 23.8A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 23.8A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP60R160P6XKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 600V, 23.8A, To-220; Transistor Polarity Infineon - 12AC9731 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 23.8A, To-220; Transistor Polarity Infineon
12AC9731
Mosfet, N-Ch, 600V, 23.8A, To-220; Transistor Polarity Infineon 12AC9731
MOSFET, N-CH, 600V, 23.8A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.144ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 23.8A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.144ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET HIGH POWER_LEGACY

MOSFET HIGH POWER_LEGACY

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPP60R160P6XKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPP60R160P6XKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPP60R160P6XKSA1
MOSFET N-CH 600V 23.8A TO220-3

MOSFET N-CH 600V 23.8A TO220-3

Supplier's Site

Technical Specifications

  RS Components, Ltd. Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2149092 1324687-IPP60R160P6XKSA1 IPP60R160P6XKSA1-ND 278-IPP60R160P6XKSA1 12AC9731 IPP60R160P6XKSA1 IPP60R160P6XKSA1
Product Name MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs 600V 23.8A TO220 MOSFET Transistor Mosfet, N-Ch, 600V, 23.8A, To-220; Transistor Polarity Infineon MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type TO-220; TO-220 TO-220; SOT3; TO-220-3 TO-220; TO-220-3 Tube TO-3; TO-220 TO-220; TO-220-3
Polarity N-Channel N-Channel N-Channel
PD 176000 milliwatts 176 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Packing Method Tube; Tube Tube Tube; Tube
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