The IPP126N10N3G is an N-channel MOSFET designed for high-frequency switching and synchronous rectification applications. It is packaged in a TO-220-3 case with a mounting style suitable for through-hole installation. The device has a drain-source breakdown voltage of 100 V, a continuous drain current of 58 A at 25 °C, and a maximum drain-source on-resistance of 12.6 mΩ at 10 V gate-source voltage. It meets RoHS standards and is qualified for automotive applications under AEC-Q101. The gate-source threshold voltage ranges from 2 V to 4 V, and the total gate charge is 58 nC at 10 V. Operating and storage junction temperatures range from -55 °C to +175 °C.
MOSFET N-CH 100V 58A TO220-3
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPP126N10N3G |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
| V(BR)DSS | 100 volts |
| IDSS | 58000 milliamps |
