Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP070N08N3G IPP070N08N3G

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069046-IPP070N08N3G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 3.5V @ 73μA Max Gate Charge: 56nC @ 10V Max Input Capacitance: 3840pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 73A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 069046-IPP070N08N3G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 3.5V @ 73μA Max Gate Charge: 56nC @ 10V Max Input Capacitance: 3840pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 73A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP070N08N3G - 069046-IPP070N08N3G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP070N08N3G
069046-IPP070N08N3G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP070N08N3G 069046-IPP070N08N3G
Manufacturer: Infineon Technologies Win Source Part Number: 069046-IPP070N08N3G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 3.5V @ 73μA Max Gate Charge: 56nC @ 10V Max Input Capacitance: 3840pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 73A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 069046-IPP070N08N3G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 73μA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 3840pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 73A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
80V 80A TO220 MOSFET Transistor
285-IPP070N08N3G
80V 80A TO220 MOSFET Transistor 285-IPP070N08N3G
MOSFET N-CH 80V 80A TO220-3 Product overview: IPP070N08N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 80A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 80A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP070N08N3G can be used for catalog matching and distributor lookup.

MOSFET N-CH 80V 80A TO220-3 Product overview: IPP070N08N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 80A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 80A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP070N08N3G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Power Field-Effect Transistor, 80A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN - 9152-IPP070N08N3G - Utmel Electronic Limited
Hong Kong, China
Power Field-Effect Transistor, 80A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
9152-IPP070N08N3G
Power Field-Effect Transistor, 80A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN 9152-IPP070N08N3G
Power Field-Effect Transistor, 80A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Power Field-Effect Transistor, 80A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 069046-IPP070N08N3G 285-IPP070N08N3G 9152-IPP070N08N3G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP070N08N3G 80V 80A TO220 MOSFET Transistor Power Field-Effect Transistor, 80A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 80 volts
PD 136000 milliwatts 136000 milliwatts
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