Infineon Technologies AG N-Channel Power MOSFET IPP045N10N3 G

Description
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit). Summary of Features Excellent switching performance World’s lowest RDS(on) Very low Qg and Qgd Excellent gate charge x RDS(on) product (FOM) RoHS compliant-halogen free MSL1 rated 2 Benefits Environmentally friendly Increased efficiency Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 48 V–80 V systems (i.e. domestic vehicles, power-tools, trucks) Isolated DC-DC converters (telecom and datacom systems Or-ing switches and circuit breakers in 48 V systems Class D audio amplifiers Uninterruptable power supplies (UPS) Applications DIN rail power supplies Energy Storage Systems EV traction inverter LED lighting system designs LED strips and signage Designers who used this product also designed with IRF1018E | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET IRF1018E | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET IRF1018E | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET
  • N-Channel Power MOSFET - IPP045N10N3 G - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP045N10N3 G - 710466-IPP045N10N3 G - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit). Summary of Features Excellent switching performance World’s lowest RDS(on) Very low Qg and Qgd Excellent gate charge x RDS(on) product (FOM) RoHS compliant-halogen free MSL1 rated 2 Benefits Environmentally friendly Increased efficiency Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 48 V–80 V systems (i.e. domestic vehicles, power-tools, trucks) Isolated DC-DC converters (telecom and datacom systems Or-ing switches and circuit breakers in 48 V systems Class D audio amplifiers Uninterruptable power supplies (UPS) Applications DIN rail power supplies Energy Storage Systems EV traction inverter LED lighting system designs LED strips and signage Designers who used this product also designed with IRF1018E | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET IRF1018E | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET IRF1018E | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IPP045N10N3 G - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPP045N10N3 G
N-Channel Power MOSFET IPP045N10N3 G
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit). Summary of Features Excellent switching performance World’s lowest RDS(on) Very low Qg and Qgd Excellent gate charge x RDS(on) product (FOM) RoHS compliant-halogen free MSL1 rated 2 Benefits Environmentally friendly Increased efficiency Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 48 V–80 V systems (i.e. domestic vehicles, power-tools, trucks) Isolated DC-DC converters (telecom and datacom systems Or-ing switches and circuit breakers in 48 V systems Class D audio amplifiers Uninterruptable power supplies (UPS) Applications DIN rail power supplies Energy Storage Systems EV traction inverter LED lighting system designs LED strips and signage Designers who used this product also designed with IRF1018E | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET IRF1018E | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET IRF1018E | N-Channel Power MOSFET IRLML5103 | P-Channel Power MOSFET

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).


Summary of Features

  • Excellent switching performance
  • World’s lowest RDS(on)
  • Very low Qg and Qgd
  • Excellent gate charge x RDS(on) product (FOM)
  • RoHS compliant-halogen free
  • MSL1 rated 2

Benefits

  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products

Potential Applications

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 48 V–80 V systems (i.e. domestic vehicles, power-tools, trucks)
  • Isolated DC-DC converters (telecom and datacom systems
  • Or-ing switches and circuit breakers in 48 V systems
  • Class D audio amplifiers
  • Uninterruptable power supplies (UPS)

Applications

  • DIN rail power supplies
  • Energy Storage Systems
  • EV traction inverter
  • LED lighting system designs
  • LED strips and signage

Designers who used this product also designed with


  • IRF1018E |
    N-Channel Power MOSFET
  • IRLML5103 |
    P-Channel Power MOSFET
  • IRF1018E |
    N-Channel Power MOSFET
  • IRLML5103 |
    P-Channel Power MOSFET
  • IRF1018E |
    N-Channel Power MOSFET
  • IRLML5103 |
    P-Channel Power MOSFET
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
100V 100A TO-220 MOSFET Transistor
278-IPP045N10N3 G
100V 100A TO-220 MOSFET Transistor 278-IPP045N10N3 G
Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 Tube Product overview: IPP045N10N3 G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 100A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 100A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP045N10N3 G can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 Tube Product overview: IPP045N10N3 G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 100A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 100A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP045N10N3 G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP045N10N3 G - 710466-IPP045N10N3 G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP045N10N3 G
710466-IPP045N10N3 G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP045N10N3 G 710466-IPP045N10N3 G
Manufacturer: Infineon Technologies Win Source Part Number: 710466-IPP045N10N3 G Manufacturer Homepage: www.infineon.com Reference case: TO-220 Reference Date Code: 10+ Popularity: Low Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 710466-IPP045N10N3 G
Manufacturer Homepage: www.infineon.com
Reference case: TO-220
Reference Date Code: 10+
Popularity: Low
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPP045N10N3 G
MOSFET IPP045N10N3 G
MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3

MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP045N10N3 G 278-IPP045N10N3 G 710466-IPP045N10N3 G IPP045N10N3 G
Product Name N-Channel Power MOSFET 100V 100A TO-220 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP045N10N3 G MOSFET
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0045 ohms
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F)
Package Type TO-220; PG-TO220-3 Tube
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