N-Channel 120V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3
MOSFET N-CH 120V 120A TO220-3 Product overview: IPP041N12N3GXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 120A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120V, 120A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP041N12N3GXKSA
Manufacturer: Infineon Technologies
Win Source Part Number: 874827-IPP041N12N3GX
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 120 V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: IPP041
Categories: Discrete Semiconductor Products
Case / Package: PG-TO220-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPP041N12N3 G, IPP041N12N3 G-ND, IPP041N12N3G, SP000652746
MOSFET N-CH 120V 120A TO220-3
MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3
MOSFET, N CHANNEL, 120V, 120A, TO220-3; Channel Type:N Channel; Drain Source Voltage Vds:120V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 120V 120A TO220-3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 448-IPP041N12N3GXKSA1-ND | 278-IPP041N12N3GXKSA1 | 874827-IPP041N12N3GXKSA1 | IPP041N12N3GXKSA1 | IPP041N12N3GXKSA1 | 47W3477 | IPP041N12N3GXKSA1 |
| Product Name | Single FETs, MOSFETs | 120V 120A TO220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP041N12N3GXKSA1 | Single FETs, MOSFETs | MOSFET | Mosfet, N Channel, 120V, 120A, To220-3; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 | Tube | SOT3; PG-TO220-3 | TO-220; TO-220-3 | TO-3 | TO-220; TO-220-3 | |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 120 volts | 120 volts | |||||
| Transconductance | 0.0830 kS |
