Infineon Technologies AG Single FETs, MOSFETs IPP075N15N3GXKSA1

N-Channel 150V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3

Power Field-Effect Transistor, 100A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET N-Ch 150V 100A OptiMOS3 TO-220

MOSFET N-Ch 150V 100A OptiMOS3 TO-220

MOSFET N-CH 150V 100A TO220-3 Product overview: IPP075N15N3GXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 100A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 100A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP075N15N3GXKSA1 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 119101-IPP075N15N3GXKSA1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 4V @ 270μA
Max Gate Charge: 93nC @ 10V
Max Input Capacitance: 5470pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): AOT2500L; IPP075N15N3 G; IPP075N15N3GHKSA1;
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance