Manufacturer: Infineon Technologies
Win Source Part Number: 069066-IPP50R380CE
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Super Junction
Polarity: N-Channel
Power Dissipation (Max): 73W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 13V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 9.9A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 260μA
Max Gate Charge: 24.8nC @ 10V
Max Input Capacitance: 584pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 380 mOhm @ 3.2A, 13V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Trans MOSFET N-CH 550V 14.1A 3-Pin(3+Tab) TO-220 Tube Product overview: IPP50R380CE from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 550V, 14.1A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 550V, 14.1A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP50R380CE can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 069066-IPP50R380CE | 278-IPP50R380CE | IPP50R380CE |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP50R380CE | 550V 14.1A TO-220 MOSFET Transistor | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 500 volts | 550 volts | |
| PD | 73000 milliwatts | 98 milliwatts | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |