Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP080N03L G IPP080N03L G

Description
Manufacturer: Infineon Technologies Win Source Part Number: 776900-IPP080N03L G Series: OptiMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Part Status: Obsolete(EOL) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PG-TO220-3-1 Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1900pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 47W (Tc) Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 776900-IPP080N03L G Series: OptiMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Part Status: Obsolete(EOL) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PG-TO220-3-1 Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1900pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 47W (Tc) Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP080N03L G - 776900-IPP080N03L G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP080N03L G
776900-IPP080N03L G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP080N03L G 776900-IPP080N03L G
Manufacturer: Infineon Technologies Win Source Part Number: 776900-IPP080N03L G Series: OptiMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Part Status: Obsolete(EOL) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PG-TO220-3-1 Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1900pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 47W (Tc) Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 776900-IPP080N03L G
Series: OptiMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Part Status: Obsolete(EOL)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PG-TO220-3-1
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1900pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 47W (Tc)
Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
30V 50A TO220 MOSFET Transistor
278-IPP080N03L G
30V 50A TO220 MOSFET Transistor 278-IPP080N03L G
MOSFET N-CH 30V 50A TO220-3 Product overview: IPP080N03L G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 50A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 50A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP080N03L G can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 50A TO220-3 Product overview: IPP080N03L G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 50A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 50A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP080N03L G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPP080N03LG-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPP080N03LG-ND
Single FETs, MOSFETs IPP080N03LG-ND
N-Channel 30V 50A (Tc) 47W (Tc) Through Hole PG-TO220-3-1

N-Channel 30V 50A (Tc) 47W (Tc) Through Hole PG-TO220-3-1

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 776900-IPP080N03L G 278-IPP080N03L G IPP080N03LG-ND
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP080N03L G 30V 50A TO220 MOSFET Transistor Single FETs, MOSFETs
PD 47000 milliwatts 47000 milliwatts
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