Infineon Technologies AG MOSFET IPP110N20NAXK

Description
MOSFET N-Ch 200V 88A TO220-3
Description
MOSFET N-Ch 200V 88A TO220-3
Datasheet
Datasheet Summary
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The IPP110N20NAXK is an N-channel MOSFET designed for high-frequency switching and synchronous rectification, housed in a PG-TO220-3 package. It has a maximum drain-source voltage of 200 V, a continuous drain current of 88 A at 25 °C, and a maximum on-state resistance of 10.7 mΩ. The device operates at up to 175 °C junction temperature and is qualified to AEC-Q101 standards. It is RoHS compliant and halogen-free per IEC61249-2-21, with a thermal resistance from junction to case of 0.5 K/W and single-pulse avalanche energy of 560 mJ.

Datasheet Summary
Powered by GS/AI

The IPP110N20NAXK is an N-channel MOSFET designed for high-frequency switching and synchronous rectification, housed in a PG-TO220-3 package. It has a maximum drain-source voltage of 200 V, a continuous drain current of 88 A at 25 °C, and a maximum on-state resistance of 10.7 mΩ. The device operates at up to 175 °C junction temperature and is qualified to AEC-Q101 standards. It is RoHS compliant and halogen-free per IEC61249-2-21, with a thermal resistance from junction to case of 0.5 K/W and single-pulse avalanche energy of 560 mJ.

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Sheung Wan, Hong Kong
MOSFET N-Ch 200V 88A TO220-3

MOSFET N-Ch 200V 88A TO220-3

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP110N20NAXK
Product Name MOSFET
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