Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPP50R280CE

Description
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs
  • 500V-950V N-Channel Power MOSFET - IPP50R280CE - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP50R280CE - 1186329-IPP50R280CE - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPP50R280CE - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPP50R280CE
500V-950V N-Channel Power MOSFET IPP50R280CE
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs

500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.


Summary of Features

  • Reduced energy stored in output capacitance (E oss)
  • High body diode ruggedness
  • Reduced reverse recovery charge (Q rr )
  • Reduced gate charge (Q g )

Benefits

  • Easy control of switching behavior
  • Better light load efficiency compared to previous CoolMOS™ generations
  • Cost attractive alternative compared to standard MOSFETs
  • Outstanding quality and reliability of CoolMOS™ technology

Potential Applications

  • Consumer
  • Lighting
  • PC silverbox

Designers who used this product also designed with


  • 1EDB8275F |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
500V 13A TO220 MOSFET Transistor
2088-IPP50R280CE
500V 13A TO220 MOSFET Transistor 2088-IPP50R280CE
MOSFETs N-Ch 500V 13A TO220-3 CoolMOS CE Product overview: IPP50R280CE from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 13A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 13A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP50R280CE can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 500V 13A TO220-3 CoolMOS CE Product overview: IPP50R280CE from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 13A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 13A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP50R280CE can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP50R280CE - 1186329-IPP50R280CE - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP50R280CE
1186329-IPP50R280CE
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP50R280CE 1186329-IPP50R280CE
Manufacturer: Infineon Technologies Win Source Part Number: 1186329-IPP50R280CE Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1186329-IPP50R280CE
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPP50R280CE
MOSFET IPP50R280CE
MOSFET N-Ch 500V 13A TO220-3 CoolMOS CE

MOSFET N-Ch 500V 13A TO220-3 CoolMOS CE

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP50R280CE 2088-IPP50R280CE 1186329-IPP50R280CE IPP50R280CE
Product Name 500V-950V N-Channel Power MOSFET 500V 13A TO220 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP50R280CE MOSFET
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.2800 ohms
QG 32.6 nC
TJ -55 to 150 C (-67 to 302 F)
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