Infineon Technologies AG Transistors IPP034NE7N3G

75V 100A 214W 3.4mΩ@100A,10V 3.8V@155uA 1 N-Channel TO-220-3 MOSFETs ROHS

Manufacturer: Infineon Technologies
Win Source Part Number: 090064-IPP034NE7N3G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 214W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 3.8V @ 155μA
Max Gate Charge: 117nC @ 10V
Max Input Capacitance: 8130pF @ 37.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.4 mOhm @ 100A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

MOSFET N-CH 75V 100A TO220-3 Product overview: IPP034NE7N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 100A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 100A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP034NE7N3G can be used for catalog matching and distributor lookup.