IPP60R180CM8 600 V CoolMOS™ 8 power transistor
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.
It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Best-in-class RDS(on)*A
Significant reduction of losses
Excellent commutation ruggedness
Integrated fast body diode
.XT interconnection
ESD protection
Benefits
Increased power density
Ease of use and fast design-in
Low ringing tendency
Simplified thermal management
Simplified portfolio
Potential Applications
Power supplies and converters
PFC stages & LLC resonant converters
High efficiency switching applications
Designers who used this product also designed with
1EDB8275F | Gate driver ICs
1EDI20I12MF | Gate driver ICs
2EDL23N06PJ | Gate driver ICs
IRS4427S | Gate driver ICs
BSC009NE2LS | N-Channel Power MOSFET
BSC016N06NS | N-Channel Power MOSFET
IDH06G65C6 | CoolSiC™ Schottky Diodes
ICE2QR2280G | CoolSET™ Quasi Resonant
ICE2QR2280G-1 | CoolSET™ Quasi Resonant
BSC160N15NS5 | N-Channel Power MOSFET
1EDN7511B | Gate driver ICs
ICE5QR1680BG | CoolSET™ Quasi Resonant
IPD031N03L G | N-Channel Power MOSFET
IPP111N15N3 G | N-Channel Power MOSFET
BSC500N20NS3 G | N-Channel Power MOSFET
IPB072N15N3 G | N-Channel Power MOSFET
1EDI20N12AF | Gate driver ICs
1ED44173N01B | Gate driver ICs
1ED3120MC12H | Gate driver ICs
1ED44171N01B | Gate driver ICs
1EDB8275F | Gate driver ICs
1EDI20I12MF | Gate driver ICs
2EDL23N06PJ | Gate driver ICs
IRS4427S | Gate driver ICs
BSC009NE2LS | N-Channel Power MOSFET
BSC016N06NS | N-Channel Power MOSFET
IDH06G65C6 | CoolSiC™ Schottky Diodes
ICE2QR2280G | CoolSET™ Quasi Resonant
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IPP60R180CM8 600 V CoolMOS™ 8 power transistor
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.
It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
- Best-in-class RDS(on)*A
- Significant reduction of losses
- Excellent commutation ruggedness
- Integrated fast body diode
- .XT interconnection
- ESD protection
Benefits
- Increased power density
- Ease of use and fast design-in
- Low ringing tendency
- Simplified thermal management
- Simplified portfolio
Potential Applications
- Power supplies and converters
- PFC stages & LLC resonant converters
- High efficiency switching applications
Designers who used this product also designed with
- 1EDB8275F |
Gate driver ICs
- 1EDI20I12MF |
Gate driver ICs
- 2EDL23N06PJ |
Gate driver ICs
- IRS4427S |
Gate driver ICs
- BSC009NE2LS |
N-Channel Power MOSFET
- BSC016N06NS |
N-Channel Power MOSFET
- IDH06G65C6 |
CoolSiC™ Schottky Diodes
- ICE2QR2280G |
CoolSET™ Quasi Resonant
- ICE2QR2280G-1 |
CoolSET™ Quasi Resonant
- BSC160N15NS5 |
N-Channel Power MOSFET
- 1EDN7511B |
Gate driver ICs
- ICE5QR1680BG |
CoolSET™ Quasi Resonant
- IPD031N03L G |
N-Channel Power MOSFET
- IPP111N15N3 G |
N-Channel Power MOSFET
- BSC500N20NS3 G |
N-Channel Power MOSFET
- IPB072N15N3 G |
N-Channel Power MOSFET
- 1EDI20N12AF |
Gate driver ICs
- 1ED44173N01B |
Gate driver ICs
- 1ED3120MC12H |
Gate driver ICs
- 1ED44171N01B |
Gate driver ICs
- 1EDB8275F |
Gate driver ICs
- 1EDI20I12MF |
Gate driver ICs
- 2EDL23N06PJ |
Gate driver ICs
- IRS4427S |
Gate driver ICs
- BSC009NE2LS |
N-Channel Power MOSFET
- BSC016N06NS |
N-Channel Power MOSFET
- IDH06G65C6 |
CoolSiC™ Schottky Diodes
- ICE2QR2280G |
CoolSET™ Quasi Resonant
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