Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPP60R180CM8 IPP60R180CM8

Description
IPP60R180CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Best-in-class RDS(on)*A Significant reduction of losses Excellent commutation ruggedness Integrated fast body diode .XT interconnection ESD protection Benefits Increased power density Ease of use and fast design-in Low ringing tendency Simplified thermal management Simplified portfolio Potential Applications Power supplies and converters PFC stages & LLC resonant converters High efficiency switching applications Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs BSC009NE2LS | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET IDH06G65C6 | CoolSiC™ Schottky Diodes ICE2QR2280G | CoolSET™ Quasi Resonant ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC160N15NS5 | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs ICE5QR1680BG | CoolSET™ Quasi Resonant IPD031N03L G | N-Channel Power MOSFET IPP111N15N3 G | N-Channel Power MOSFET BSC500N20NS3 G | N-Channel Power MOSFET IPB072N15N3 G | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs 1ED44173N01B | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs BSC009NE2LS | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET IDH06G65C6 | CoolSiC™ Schottky Diodes ICE2QR2280G | CoolSET™ Quasi Resonant 1 2 3 4 5
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Description
IPP60R180CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Best-in-class RDS(on)*A Significant reduction of losses Excellent commutation ruggedness Integrated fast body diode .XT interconnection ESD protection Benefits Increased power density Ease of use and fast design-in Low ringing tendency Simplified thermal management Simplified portfolio Potential Applications Power supplies and converters PFC stages & LLC resonant converters High efficiency switching applications Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs BSC009NE2LS | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET IDH06G65C6 | CoolSiC™ Schottky Diodes ICE2QR2280G | CoolSET™ Quasi Resonant ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC160N15NS5 | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs ICE5QR1680BG | CoolSET™ Quasi Resonant IPD031N03L G | N-Channel Power MOSFET IPP111N15N3 G | N-Channel Power MOSFET BSC500N20NS3 G | N-Channel Power MOSFET IPB072N15N3 G | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs 1ED44173N01B | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs BSC009NE2LS | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET IDH06G65C6 | CoolSiC™ Schottky Diodes ICE2QR2280G | CoolSET™ Quasi Resonant 1 2 3 4 5
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Suppliers

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPP60R180CM8 - IPP60R180CM8 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPP60R180CM8
IPP60R180CM8
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPP60R180CM8 IPP60R180CM8
IPP60R180CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Best-in-class RDS(on)*A Significant reduction of losses Excellent commutation ruggedness Integrated fast body diode .XT interconnection ESD protection Benefits Increased power density Ease of use and fast design-in Low ringing tendency Simplified thermal management Simplified portfolio Potential Applications Power supplies and converters PFC stages & LLC resonant converters High efficiency switching applications Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs BSC009NE2LS | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET IDH06G65C6 | CoolSiC™ Schottky Diodes ICE2QR2280G | CoolSET™ Quasi Resonant ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC160N15NS5 | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs ICE5QR1680BG | CoolSET™ Quasi Resonant IPD031N03L G | N-Channel Power MOSFET IPP111N15N3 G | N-Channel Power MOSFET BSC500N20NS3 G | N-Channel Power MOSFET IPB072N15N3 G | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs 1ED44173N01B | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs BSC009NE2LS | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET IDH06G65C6 | CoolSiC™ Schottky Diodes ICE2QR2280G | CoolSET™ Quasi Resonant 1 2 3 4 5

IPP60R180CM8 600 V CoolMOS™ 8 power transistor

The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.

It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.


Summary of Features

  • Best-in-class RDS(on)*A
  • Significant reduction of losses
  • Excellent commutation ruggedness
  • Integrated fast body diode
  • .XT interconnection
  • ESD protection

Benefits

  • Increased power density
  • Ease of use and fast design-in
  • Low ringing tendency
  • Simplified thermal management
  • Simplified portfolio

Potential Applications

  • Power supplies and converters
  • PFC stages & LLC resonant converters
  • High efficiency switching applications

Designers who used this product also designed with


  • 1EDB8275F |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • BSC009NE2LS |
    N-Channel Power MOSFET
  • BSC016N06NS |
    N-Channel Power MOSFET
  • IDH06G65C6 |
    CoolSiC™ Schottky Diodes
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • BSC160N15NS5 |
    N-Channel Power MOSFET
  • 1EDN7511B |
    Gate driver ICs
  • ICE5QR1680BG |
    CoolSET™ Quasi Resonant
  • IPD031N03L G |
    N-Channel Power MOSFET
  • IPP111N15N3 G |
    N-Channel Power MOSFET
  • BSC500N20NS3 G |
    N-Channel Power MOSFET
  • IPB072N15N3 G |
    N-Channel Power MOSFET
  • 1EDI20N12AF |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1ED3120MC12H |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • BSC009NE2LS |
    N-Channel Power MOSFET
  • BSC016N06NS |
    N-Channel Power MOSFET
  • IDH06G65C6 |
    CoolSiC™ Schottky Diodes
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPP60R180CM8
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPP60R180CM8
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1800 ohms
QG 17 nC
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