Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP075N15N3G IPP075N15N3G

Description
Manufacturer: Infineon Technologies Win Source Part Number: 089106-IPP075N15N3G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Family Name: IPP075N15N3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 4V @ 270μA Max Gate Charge: 93nC @ 10V Max Input Capacitance: 5470pF @ 75V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 100A, 10V Alternative Parts (Cross-Reference): SUP80090E-GE3; FDP075N15A; FDP075N15A-F102; FDP083N15A-F102; IPP075N15N3 G; SUP80090E-GE3; AOT2500L; Introduction Date: July 15, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 089106-IPP075N15N3G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Family Name: IPP075N15N3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 4V @ 270μA Max Gate Charge: 93nC @ 10V Max Input Capacitance: 5470pF @ 75V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 100A, 10V Alternative Parts (Cross-Reference): SUP80090E-GE3; FDP075N15A; FDP075N15A-F102; FDP083N15A-F102; IPP075N15N3 G; SUP80090E-GE3; AOT2500L; Introduction Date: July 15, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP075N15N3G - 089106-IPP075N15N3G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP075N15N3G
089106-IPP075N15N3G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP075N15N3G 089106-IPP075N15N3G
Manufacturer: Infineon Technologies Win Source Part Number: 089106-IPP075N15N3G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Family Name: IPP075N15N3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 4V @ 270μA Max Gate Charge: 93nC @ 10V Max Input Capacitance: 5470pF @ 75V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 100A, 10V Alternative Parts (Cross-Reference): SUP80090E-GE3; FDP075N15A; FDP075N15A-F102; FDP083N15A-F102; IPP075N15N3 G; SUP80090E-GE3; AOT2500L; Introduction Date: July 15, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 089106-IPP075N15N3G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: IPP075N15N3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 4V @ 270μA
Max Gate Charge: 93nC @ 10V
Max Input Capacitance: 5470pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): SUP80090E-GE3; FDP075N15A; FDP075N15A-F102; FDP083N15A-F102; IPP075N15N3 G; SUP80090E-GE3; AOT2500L;
Introduction Date: July 15, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
Automotive 150V 100A TO-220 MOSFET Transistor
285-IPP075N15N3G
Automotive 150V 100A TO-220 MOSFET Transistor 285-IPP075N15N3G
Trans MOSFET N-CH 150V 100A Automotive 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 150V 100A TO220-3 Product overview: IPP075N15N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 150V, 100A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 150V, 100A, TO-220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP075N15N3G can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 150V 100A Automotive 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 150V 100A TO220-3 Product overview: IPP075N15N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 150V, 100A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 150V, 100A, TO-220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP075N15N3G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistors - IPP075N15N3G - ODG (Origin Data Global)
Shenzhen, China
Transistors
IPP075N15N3G
Transistors IPP075N15N3G
150V 100A 300W 7.5mΩ@10V,100A 4V@270uA 1 N-Channel TO-220-3 MOSFETs ROHS

150V 100A 300W 7.5mΩ@10V,100A 4V@270uA 1 N-Channel TO-220-3 MOSFETs ROHS

Supplier's Site
Transistor - 38342208 - Radwell International
Willingboro, NJ, United States
Transistor
38342208
Transistor 38342208
(PRICE/EA) MOSFET, N CHANNEL, 150V, 100A, TO-220-3; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:100A; DRAIN SOURCE VOLTAGE VDS:150V; ON. FREE 2 YEAR RADWELL WARRANTY

(PRICE/EA) MOSFET, N CHANNEL, 150V, 100A, TO-220-3; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:100A; DRAIN SOURCE VOLTAGE VDS:150V; ON. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 089106-IPP075N15N3G 285-IPP075N15N3G IPP075N15N3G 38342208
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP075N15N3G Automotive 150V 100A TO-220 MOSFET Transistor Transistors Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 150 volts
PD 300000 milliwatts 300000 milliwatts
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