The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
Summary of Features
Lower R DS(on) without compromising FOM gd and FOM oss
Lower output charge
Ultra-low reverse recovery charge
Increased commutation ruggedness
Higher switching frequency possible
Benefits
Reduced paralleling
Size reduction enabled with SuperSO8 best-in-class
Higher power density designs
More rugged products
System cost reduction
Improved EMI behavior
Potential Applications
Low voltage drives
Telecom
Solar
Applications
DIN rail power supplies
Offline UPS - high frequency transformers
Telecommunication infrastructure
Uninterruptible power supplies (UPS)
Designers who used this product also designed with
IKW30N65H5 | IGBT discretes
IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSS316N | Small signal/small power MOSFET
IKW30N65H5 | IGBT discretes
IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSS316N | Small signal/small power MOSFET
IKW30N65H5 | IGBT discretes
IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSS316N | Small signal/small power MOSFET
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
Summary of Features
- Lower R DS(on) without compromising FOM gd and FOM oss
- Lower output charge
- Ultra-low reverse recovery charge
- Increased commutation ruggedness
- Higher switching frequency possible
Benefits
- Reduced paralleling
- Size reduction enabled with SuperSO8 best-in-class
- Higher power density designs
- More rugged products
- System cost reduction
- Improved EMI behavior
Potential Applications
- Low voltage drives
- Telecom
- Solar
Applications
- DIN rail power supplies
- Offline UPS - high frequency transformers
- Telecommunication infrastructure
- Uninterruptible power supplies (UPS)
Designers who used this product also designed with
- IKW30N65H5 |
IGBT discretes
- IPW60R060P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPW60R070CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSS316N |
Small signal/small power MOSFET
- IKW30N65H5 |
IGBT discretes
- IPW60R060P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPW60R070CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSS316N |
Small signal/small power MOSFET
- IKW30N65H5 |
IGBT discretes
- IPW60R060P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPW60R070CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSS316N |
Small signal/small power MOSFET
