Infineon Technologies AG N-Channel Power MOSFET IPP076N15N5

Description
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. Summary of Features Lower R DS(on) without compromising FOM gd and FOM oss Lower output charge Ultra-low reverse recovery charge Increased commutation ruggedness Higher switching frequency possible Benefits Reduced paralleling Size reduction enabled with SuperSO8 best-in-class Higher power density designs More rugged products System cost reduction Improved EMI behavior Potential Applications Low voltage drives Telecom Solar Applications DIN rail power supplies Offline UPS - high frequency transformers Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW30N65H5 | IGBT discretes IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS316N | Small signal/small power MOSFET IKW30N65H5 | IGBT discretes IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS316N | Small signal/small power MOSFET IKW30N65H5 | IGBT discretes IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS316N | Small signal/small power MOSFET
Request a Quote Datasheet
Description
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. Summary of Features Lower R DS(on) without compromising FOM gd and FOM oss Lower output charge Ultra-low reverse recovery charge Increased commutation ruggedness Higher switching frequency possible Benefits Reduced paralleling Size reduction enabled with SuperSO8 best-in-class Higher power density designs More rugged products System cost reduction Improved EMI behavior Potential Applications Low voltage drives Telecom Solar Applications DIN rail power supplies Offline UPS - high frequency transformers Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW30N65H5 | IGBT discretes IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS316N | Small signal/small power MOSFET IKW30N65H5 | IGBT discretes IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS316N | Small signal/small power MOSFET IKW30N65H5 | IGBT discretes IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS316N | Small signal/small power MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IPP076N15N5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPP076N15N5
N-Channel Power MOSFET IPP076N15N5
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. Summary of Features Lower R DS(on) without compromising FOM gd and FOM oss Lower output charge Ultra-low reverse recovery charge Increased commutation ruggedness Higher switching frequency possible Benefits Reduced paralleling Size reduction enabled with SuperSO8 best-in-class Higher power density designs More rugged products System cost reduction Improved EMI behavior Potential Applications Low voltage drives Telecom Solar Applications DIN rail power supplies Offline UPS - high frequency transformers Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW30N65H5 | IGBT discretes IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS316N | Small signal/small power MOSFET IKW30N65H5 | IGBT discretes IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS316N | Small signal/small power MOSFET IKW30N65H5 | IGBT discretes IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS316N | Small signal/small power MOSFET

The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.


Summary of Features

  • Lower R DS(on) without compromising FOM gd and FOM oss
  • Lower output charge
  • Ultra-low reverse recovery charge
  • Increased commutation ruggedness
  • Higher switching frequency possible

Benefits

  • Reduced paralleling
  • Size reduction enabled with SuperSO8 best-in-class
  • Higher power density designs
  • More rugged products
  • System cost reduction
  • Improved EMI behavior

Potential Applications

  • Low voltage drives
  • Telecom
  • Solar

Applications

  • DIN rail power supplies
  • Offline UPS - high frequency transformers
  • Telecommunication infrastructure
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IKW30N65H5 |
    IGBT discretes
  • IPW60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R070CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSS316N |
    Small signal/small power MOSFET
  • IKW30N65H5 |
    IGBT discretes
  • IPW60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R070CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSS316N |
    Small signal/small power MOSFET
  • IKW30N65H5 |
    IGBT discretes
  • IPW60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R070CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSS316N |
    Small signal/small power MOSFET
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP076N15N5 - 826016-IPP076N15N5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP076N15N5
826016-IPP076N15N5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP076N15N5 826016-IPP076N15N5
Manufacturer: Infineon Technologies Win Source Part Number: 826016-IPP076N15N5 Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 826016-IPP076N15N5
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now
Singapore
150V 112A TO-220 MOSFET Transistor
278-IPP076N15N5
150V 112A TO-220 MOSFET Transistor 278-IPP076N15N5
Trans MOSFET N-CH 150V 112A 3-Pin(3+Tab) TO-220 Tube Product overview: IPP076N15N5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 112A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 112A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP076N15N5 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 150V 112A 3-Pin(3+Tab) TO-220 Tube Product overview: IPP076N15N5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 112A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 112A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP076N15N5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP076N15N5 826016-IPP076N15N5 278-IPP076N15N5
Product Name N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP076N15N5 150V 112A TO-220 MOSFET Transistor
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0076 ohms
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F)
Package Type TO-220; PG-TO220-3 SOT3 Tube
Unlock Full Specs
to access all available technical data