The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
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Trans MOSFET N-CH 150V 112A 3-Pin(3+Tab) TO-220 Tube Product overview: IPP076N15N5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 112A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 112A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP076N15N5 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 826016-IPP076N15N5
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPP076N15N5 | 278-IPP076N15N5 | 826016-IPP076N15N5 |
| Product Name | N-Channel Power MOSFET | 150V 112A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP076N15N5 |
| Polarity | N-Channel; N | ||
| Transistor Technology / Material | Si/SiC | ||
| rDS(on) | 0.0076 ohms | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | |
| Package Type | TO-220; PG-TO220-3 | Tube | SOT3 |