Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPP60R060C7 IPP60R060C7

Description
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Connected and smart lighting for IoT DIN rail power supplies EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPP60R060C7 - IPP60R060C7 - Infineon Technologies AG
    Infineon Technologies AG
Request a Quote
Description
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Connected and smart lighting for IoT DIN rail power supplies EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IPP60R060C7 is a 600V CoolMOS™ C7 silicon superjunction MOSFET in a PG-TO-220 package, designed for high-efficiency switching applications such as PFC and LLC converters in server, telecom, and solar power systems. It has a maximum continuous drain current of 54 A at TJ = 150°C and a drain-source on-state resistance of 60 mΩ at TJ = 25°C. The device supports a maximum dv/dt ruggedness of 120 V/ns and exhibits a total gate charge of 68 nC. The body diode supports a maximum di/dt of 420 A/µs. Thermal resistance from junction to case is 0.772 °C/W, and the maximum operating junction temperature is 150 °C. The MOSFET is qualified for industrial-grade applications according to JEDEC standards J-STD-020 and JESD22.

Datasheet Summary
Powered by GS/AI

The IPP60R060C7 is a 600V CoolMOS™ C7 silicon superjunction MOSFET in a PG-TO-220 package, designed for high-efficiency switching applications such as PFC and LLC converters in server, telecom, and solar power systems. It has a maximum continuous drain current of 54 A at TJ = 150°C and a drain-source on-state resistance of 60 mΩ at TJ = 25°C. The device supports a maximum dv/dt ruggedness of 120 V/ns and exhibits a total gate charge of 68 nC. The body diode supports a maximum di/dt of 420 A/µs. Thermal resistance from junction to case is 0.772 °C/W, and the maximum operating junction temperature is 150 °C. The MOSFET is qualified for industrial-grade applications according to JEDEC standards J-STD-020 and JESD22.

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPP60R060C7 - IPP60R060C7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPP60R060C7
IPP60R060C7
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPP60R060C7 IPP60R060C7
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Connected and smart lighting for IoT DIN rail power supplies EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs

CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.


Summary of Features

  • Reduced switching loss parameters such as Q G, C oss, E oss
  • Best-in-class figure of merit Q G*R DS(on)
  • Increased switching frequency
  • Best R (on)*A in the world
  • Rugged body diode

Benefits

  • Enables increasing switching frequency without loss in efficiency
  • Measure showing key parameter for light load and full load efficiency
  • Doubling the switching frequency will half the size of magnetic components
  • Smaller packages for same R DS(on)
  • Can be used in many more positions for both hard and soft switching topologies

Potential Applications

  • Server
  • Telecom
  • PC power
  • Solar
  • Industrial
  • USB-PD

Applications

  • 48 V intermediate bus converter (IBC)
  • Connected and smart lighting for IoT
  • DIN rail power supplies

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • 1EDB8275F |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPP60R060C7
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPP60R060C7
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0600 ohms
QG 68 nC
Unlock Full Specs
to access all available technical data