MOSFET N-CH 600V 12A TO220-3 Product overview: IPP60R280P7XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 12A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP60R280P7XKSA1
N-Channel 600V 12A (Tc) 53W (Tc) Through Hole PG-TO220-3
Manufacturer: Infineon Technologies
Win Source Part Number: 921337-IPP60R280P7XK
Series: CoolMOS™ P7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 12A (Tc) 53W (Tc) Through Hole PG-TO220-3
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: IPP60R280
Categories: Discrete Semiconductor Products
Case / Package: PG-TO220-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 600V 12A TO220-3
MOSFET N-CH 600V 12A TO220-3
MOSFET, N-CH, 600V, 12A, TO-220, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:12A, DRAIN SOURCE VOLTAGE VDS:600V, ON RESISTANCE RDS(ON):0.214OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:3.5V, POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 600V, 12A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.214ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPP60R280P7XKSA1 | 2144418 | 2144418P | IPP60R280P7XKSA1-ND | 921337-IPP60R280P7XKSA1 | IPP60R280P7XKSA1 | IPP60R280P7XKSA1 | IPP60R280P7XKSA1 | 108089168 | 34AC1711 |
| Product Name | 600V 12A TO220 MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP60R280P7XKSA1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor | Mosfet, N-Ch, 600V, 12A, To-220; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | |||||||||
| V(BR)DSS | 600 volts | 600 volts | ||||||||
| PD | 53 milliwatts | 53000 milliwatts | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
