Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPP60R190P6

Description
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications Automotive Light electric vehicles (LEV) Designers who used this product also designed with 2EDL05N06PF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDL05N06PF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDL05N06PF | Gate driver ICs 1EDN8511B | Gate driver ICs
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Description
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications Automotive Light electric vehicles (LEV) Designers who used this product also designed with 2EDL05N06PF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDL05N06PF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDL05N06PF | Gate driver ICs 1EDN8511B | Gate driver ICs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPP60R190P6 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPP60R190P6
500V-950V N-Channel Power MOSFET IPP60R190P6
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications Automotive Light electric vehicles (LEV) Designers who used this product also designed with 2EDL05N06PF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDL05N06PF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDL05N06PF | Gate driver ICs 1EDN8511B | Gate driver ICs

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.


Summary of Features

  • Reduced gate charge (Q g)
  • Higher V th
  • Good body diode ruggedness
  • Optimized integrated R g
  • Improved dv/dt from 50V/ns
  • CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

  • Improved effciency especially in light load condition
  • Better efficiency in soft switching applications due to earlier turn-off
  • Suitable for hard- & soft-switching topologies
  • Optimized balance of efficiency and ease of use and good controllability of switching behavior
  • High robustness and better efficiency
  • Outstanding quality & reliability

Potential Applications

  • PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
  • PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Applications

  • Automotive
  • Light electric vehicles (LEV)

Designers who used this product also designed with


  • 2EDL05N06PF |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2EDL05N06PF |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2EDL05N06PF |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
Supplier's Site Datasheet
Singapore, Singapore
600V 20.2A TO-220 MOSFET Transistor
278-IPP60R190P6
600V 20.2A TO-220 MOSFET Transistor 278-IPP60R190P6
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220 Tube Product overview: IPP60R190P6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP60R190P6 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220 Tube Product overview: IPP60R190P6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP60R190P6 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Electronic Surplus - IPP60R190P6 - 1186338-IPP60R190P6 - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IPP60R190P6
1186338-IPP60R190P6
Electronic Surplus - IPP60R190P6 1186338-IPP60R190P6
Manufacturer: Infineon Technologies Win Source Part Number: 1186338-IPP60R190P6 Series: CoolMOS P6 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Family Name: IPP60R190P6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.infineon.com Manufacturer Package: PG-TO-220-3 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4.5V @ 630μ Gate Charge (Qg) (Maximum) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1750pF @ 100V Vgs (Maximum): ±20V Power Dissipation (Maximum): 151W (Tc) Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 7.6A, 10V Alternative Parts (Cross-Reference): IXKP20N60C5; TK20D60U(STA4,Q); MMP60R190PTH; ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1186338-IPP60R190P6
Series: CoolMOS P6
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Family Name: IPP60R190P6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.infineon.com
Manufacturer Package: PG-TO-220-3
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4.5V @ 630μ
Gate Charge (Qg) (Maximum) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1750pF @ 100V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 151W (Tc)
Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 7.6A, 10V
Alternative Parts (Cross-Reference): IXKP20N60C5; TK20D60U(STA4,Q); MMP60R190PTH;
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET HIGH POWER_PRC/PRFRM

MOSFET HIGH POWER_PRC/PRFRM

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IPP60R190P6
Triode/MOS Tube/Transistor >> MOSFETs IPP60R190P6
TO-220 MOSFETs ROHS

TO-220 MOSFETs ROHS

Supplier's Site Datasheet
Transistors - IPP60R190P6 - ODG (Origin Data Global)
Shenzhen, China
Transistors
IPP60R190P6
Transistors IPP60R190P6
TO-220 MOSFETs ROHS

TO-220 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited ODG (Origin Data Global)
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IPP60R190P6 278-IPP60R190P6 1186338-IPP60R190P6 IPP60R190P6 IPP60R190P6 IPP60R190P6
Product Name 500V-950V N-Channel Power MOSFET 600V 20.2A TO-220 MOSFET Transistor Electronic Surplus - IPP60R190P6 MOSFET Triode/MOS Tube/Transistor >> MOSFETs Transistors
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.1900 ohms
QG 37 nC
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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