Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
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Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220 Tube Product overview: IPP60R190P6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP60R190P6 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1186338-IPP60R190P6
Series: CoolMOS P6
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Family Name: IPP60R190P6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.infineon.com
Manufacturer Package: PG-TO-220-3
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4.5V @ 630μ
Gate Charge (Qg) (Maximum) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1750pF @ 100V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 151W (Tc)
Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 7.6A, 10V
Alternative Parts (Cross-Reference): IXKP20N60C5; TK20D60U(STA4,Q); MMP60R190PTH;
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
TO-220 MOSFETs ROHS
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | IPP60R190P6 | 278-IPP60R190P6 | 1186338-IPP60R190P6 | IPP60R190P6 | IPP60R190P6 | IPP60R190P6 |
| Product Name | 500V-950V N-Channel Power MOSFET | 600V 20.2A TO-220 MOSFET Transistor | Electronic Surplus - IPP60R190P6 | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Transistors |
| Polarity | N-Channel; N | N-Channel | ||||
| Transistor Technology / Material | Si/SiC | |||||
| rDS(on) | 0.1900 ohms | |||||
| QG | 37 nC | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |