Infineon Technologies AG N-Channel Power MOSFET IPP026N10NF2S

Description
StrongIRFET™ 2 single N-channel power MOSFET 100 V in TO-220 package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low-switching frequency Industry standard footprint through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Ease of manufacturing Potential Applications Power Management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles Applications Light electric vehicles (LEV) On-board charging (OBC) for electric vehicles Designers who used this product also designed with IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPW65R050CFD7A | Automotive MOSFET IPW65R115CFD7A | Automotive MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPW65R050CFD7A | Automotive MOSFET IPW65R115CFD7A | Automotive MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPW65R050CFD7A | Automotive MOSFET IPW65R115CFD7A | Automotive MOSFET
  • N-Channel Power MOSFET - IPP026N10NF2S - Infineon Technologies AG
    Infineon Technologies AG
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Description
StrongIRFET™ 2 single N-channel power MOSFET 100 V in TO-220 package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low-switching frequency Industry standard footprint through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Ease of manufacturing Potential Applications Power Management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles Applications Light electric vehicles (LEV) On-board charging (OBC) for electric vehicles Designers who used this product also designed with IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPW65R050CFD7A | Automotive MOSFET IPW65R115CFD7A | Automotive MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPW65R050CFD7A | Automotive MOSFET IPW65R115CFD7A | Automotive MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPW65R050CFD7A | Automotive MOSFET IPW65R115CFD7A | Automotive MOSFET
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Datasheet
Datasheet Summary
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IPP026N10NF2S is an N-channel power MOSFET rated for 100 V drain-source voltage, designed for high-current switching applications. It is packaged in a PG-TO220-3 case with dimensions of 14.32 to 15.80 mm in length, 9.90 to 10.67 mm in width, and a lead pitch of 2.54 mm. The device has a maximum on-resistance of 2.6 mΩ at 25°C and can handle a continuous drain current of 184 A at a case temperature of 25°C. It is RoHS compliant and halogen-free according to IEC 61249-2-21. The MOSFET is avalanche-tested and meets JEDEC standards for reliability.

Datasheet Summary
Powered by GS/AI

IPP026N10NF2S is an N-channel power MOSFET rated for 100 V drain-source voltage, designed for high-current switching applications. It is packaged in a PG-TO220-3 case with dimensions of 14.32 to 15.80 mm in length, 9.90 to 10.67 mm in width, and a lead pitch of 2.54 mm. The device has a maximum on-resistance of 2.6 mΩ at 25°C and can handle a continuous drain current of 184 A at a case temperature of 25°C. It is RoHS compliant and halogen-free according to IEC 61249-2-21. The MOSFET is avalanche-tested and meets JEDEC standards for reliability.

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N-Channel Power MOSFET - IPP026N10NF2S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPP026N10NF2S
N-Channel Power MOSFET IPP026N10NF2S
StrongIRFET™ 2 single N-channel power MOSFET 100 V in TO-220 package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low-switching frequency Industry standard footprint through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Ease of manufacturing Potential Applications Power Management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles Applications Light electric vehicles (LEV) On-board charging (OBC) for electric vehicles Designers who used this product also designed with IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPW65R050CFD7A | Automotive MOSFET IPW65R115CFD7A | Automotive MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPW65R050CFD7A | Automotive MOSFET IPW65R115CFD7A | Automotive MOSFET IPD50N06S4L-12 | Automotive MOSFET AIKW50N65RF5 | CoolSiC™ hybrid discrete IPW65R050CFD7A | Automotive MOSFET IPW65R115CFD7A | Automotive MOSFET

StrongIRFET™ 2 single N-channel power MOSFET 100 V in TO-220 package

Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.


Summary of Features

  • Broad availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high- and low-switching frequency
  • Industry standard footprint through-hole package
  • High current rating
  • Capable of wave-soldering

Benefits

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout allows for drop-in replacement
  • Increased current carrying capability
  • Ease of manufacturing

Potential Applications

  • Power Management (SMPS)
  • Adapter
  • Motor drives
  • Battery powered applications
  • Battery management
  • UPS
  • Light electric vehicles

Applications

  • Light electric vehicles (LEV)
  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • IPD50N06S4L-12 |
    Automotive MOSFET
  • AIKW50N65RF5 |
    CoolSiC™ hybrid discrete
  • IPW65R050CFD7A |
    Automotive MOSFET
  • IPW65R115CFD7A |
    Automotive MOSFET
  • IPD50N06S4L-12 |
    Automotive MOSFET
  • AIKW50N65RF5 |
    CoolSiC™ hybrid discrete
  • IPW65R050CFD7A |
    Automotive MOSFET
  • IPW65R115CFD7A |
    Automotive MOSFET
  • IPD50N06S4L-12 |
    Automotive MOSFET
  • AIKW50N65RF5 |
    CoolSiC™ hybrid discrete
  • IPW65R050CFD7A |
    Automotive MOSFET
  • IPW65R115CFD7A |
    Automotive MOSFET
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPP026N10NF2S
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0026 ohms
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