Infineon Technologies AG N-Channel MOSFET Transistor IPP086N10N3

N-CHANNEL POWER MOSFET Product overview: IPP086N10N3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP086N10N3 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1378634-IPP086N10N3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
Mfr: Infineon Technologies
Series: OptiMOS™
Package: Bulk
Product Status: Active
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
Power Dissipation (Max): 125W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: Vendor Undefined
ECCN: EAR99