Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP057N15NM6 IPP057N15NM6

Description
IPP057N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ 5 150 V products. OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching. Summary of Features 20% lower FOMg than OptiMOS™ 5 Industry's lowest Qrr in 150 V Improved diode softness vs OptiMOS™ 5 Tight Vgs(th) spread of +/-500 mV High avalanche ruggedness Max Tj of 175°C and MSL1 Benefits Low conduction and switching losses Stable operation with improved EMI Better current sharing when paralleling Enhanced robustness Flexible mechanical assembly Improved system reliability Applications Energy Storage Systems Light electric vehicles (LEV) Power conversion
Request a Quote Datasheet
Description
IPP057N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ 5 150 V products. OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching. Summary of Features 20% lower FOMg than OptiMOS™ 5 Industry's lowest Qrr in 150 V Improved diode softness vs OptiMOS™ 5 Tight Vgs(th) spread of +/-500 mV High avalanche ruggedness Max Tj of 175°C and MSL1 Benefits Low conduction and switching losses Stable operation with improved EMI Better current sharing when paralleling Enhanced robustness Flexible mechanical assembly Improved system reliability Applications Energy Storage Systems Light electric vehicles (LEV) Power conversion
Request a Quote Datasheet

Suppliers

Company
Product
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Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP057N15NM6 - IPP057N15NM6 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP057N15NM6
IPP057N15NM6
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP057N15NM6 IPP057N15NM6
IPP057N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ 5 150 V products. OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching. Summary of Features 20% lower FOMg than OptiMOS™ 5 Industry's lowest Qrr in 150 V Improved diode softness vs OptiMOS™ 5 Tight Vgs(th) spread of +/-500 mV High avalanche ruggedness Max Tj of 175°C and MSL1 Benefits Low conduction and switching losses Stable operation with improved EMI Better current sharing when paralleling Enhanced robustness Flexible mechanical assembly Improved system reliability Applications Energy Storage Systems Light electric vehicles (LEV) Power conversion

IPP057N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ 5 150 V products.

OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.


Summary of Features

  • 20% lower FOMg than OptiMOS™ 5
  • Industry's lowest Qrr in 150 V
  • Improved diode softness vs OptiMOS™ 5
  • Tight Vgs(th) spread of +/-500 mV
  • High avalanche ruggedness
  • Max Tj of 175°C and MSL1

Benefits

  • Low conduction and switching losses
  • Stable operation with improved EMI
  • Better current sharing when paralleling
  • Enhanced robustness
  • Flexible mechanical assembly
  • Improved system reliability

Applications

  • Energy Storage Systems
  • Light electric vehicles (LEV)
  • Power conversion
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPP057N15NM6
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP057N15NM6
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0057 ohms
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