DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 11A, 600V, 0.299OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: Infineon Technologies
Win Source Part Number: 069073-IPP60R299CP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 96W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 440μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1100pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 299 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP
| Radwell International | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 38342280 | 069073-IPP60R299CP | IPP60R299CP |
| Product Name | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP60R299CP | MOSFET |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 650 volts | ||
| PD | 96000 milliwatts |
