MOSFET N-CH 80V 80A TO220-3 Product overview: IPP052N08N5AKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 80A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 80A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP052N08N5AKSA1
12V-300V N-Channel Power MOSFET
N-Channel 80V 80A (Tc) 125W (Tc) Through Hole PG-TO220-3
Manufacturer: Infineon Technologies
Win Source Part Number: 874830-IPP052N08N5AK
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 80 V 80A (Tc) 125W (Tc) Through Hole PG-TO220-3
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: IPP052
Categories: Discrete Semiconductor Products
Case / Package: PG-TO220-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET, N-CH, 80V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 80V 80A TO220-3
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Win Source Electronics | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPP052N08N5AKSA1 | IPP052N08N5AKSA1 | IPP052N08N5AKSA1-ND | 874830-IPP052N08N5AKSA1 | 13AC9069 | 376-IPP052N08N5AKSA1 | IPP052N08N5AKSA1 | IPP052N08N5AKSA1 |
| Product Name | 80V 80A TO220 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP052N08N5AKSA1 | Mosfet, N-Ch, 80V, 80A, To-220; Transistor Polarity Infineon | MOSFET N-CH TO220-3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| V(BR)DSS | 80 volts | |||||||
| Transconductance | 0.0520 kS | |||||||
| PD | 125 milliwatts | 125000 milliwatts |