Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP060N06NAKSA1 IPP060N06NAKSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1045961-IPP060N06NAK SA1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17A (Ta), 45A (Tc) Gate-Source Threshold Voltage: 2.8V @ 36μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 2000pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1045961-IPP060N06NAK SA1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17A (Ta), 45A (Tc) Gate-Source Threshold Voltage: 2.8V @ 36μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 2000pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP060N06NAKSA1 - 1045961-IPP060N06NAKSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP060N06NAKSA1
1045961-IPP060N06NAKSA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP060N06NAKSA1 1045961-IPP060N06NAKSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1045961-IPP060N06NAK SA1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17A (Ta), 45A (Tc) Gate-Source Threshold Voltage: 2.8V @ 36μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 2000pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1045961-IPP060N06NAKSA1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 17A (Ta), 45A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 36μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 2000pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
60V 17A 45A TO220 MOSFET Transistor
278-IPP060N06NAKSA1
60V 17A 45A TO220 MOSFET Transistor 278-IPP060N06NAKSA1
MOSFET N-CH 60V 17A/45A TO220-3 Product overview: IPP060N06NAKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 17A, 45A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 17A, 45A, TO220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP060N06NAKSA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 17A/45A TO220-3 Product overview: IPP060N06NAKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 17A, 45A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 17A, 45A, TO220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP060N06NAKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPP060N06NAKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPP060N06NAKSA1-ND
Single FETs, MOSFETs IPP060N06NAKSA1-ND
N-Channel 60V 17A (Ta), 45A (Tc) 3W (Ta), 83W (Tc) Through Hole PG-TO220-3

N-Channel 60V 17A (Ta), 45A (Tc) 3W (Ta), 83W (Tc) Through Hole PG-TO220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPP060N06NAKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPP060N06NAKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPP060N06NAKSA1
MOSFET N-CH 60V 17A/45A TO220-3

MOSFET N-CH 60V 17A/45A TO220-3

Supplier's Site
Mosfet Transistor, N Channel, 45 A, 60 V, 0.0052 Ohm, 10 V, 2.8 V Rohs Compliant Infineon - 50Y2056 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 45 A, 60 V, 0.0052 Ohm, 10 V, 2.8 V Rohs Compliant Infineon
50Y2056
Mosfet Transistor, N Channel, 45 A, 60 V, 0.0052 Ohm, 10 V, 2.8 V Rohs Compliant Infineon 50Y2056
MOSFET Transistor, N Channel, 45 A, 60 V, 0.0052 ohm, 10 V, 2.8 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 45 A, 60 V, 0.0052 ohm, 10 V, 2.8 V RoHS Compliant: Yes

Supplier's Site
Transistor - 108044557 - Radwell International
Willingboro, NJ, United States
Transistor
108044557
Transistor 108044557
MOSFET TRANSISTOR, N CHANNEL, 45 A, 60 V, 0.0052 OHM, 10 V, 2.8 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET TRANSISTOR, N CHANNEL, 45 A, 60 V, 0.0052 OHM, 10 V, 2.8 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1045961-IPP060N06NAKSA1 278-IPP060N06NAKSA1 IPP060N06NAKSA1-ND IPP060N06NAKSA1 50Y2056 108044557
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP060N06NAKSA1 60V 17A 45A TO220 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 45 A, 60 V, 0.0052 Ohm, 10 V, 2.8 V Rohs Compliant Infineon Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 3000 to 83000 milliwatts 83 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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7 suppliers