Manufacturer: Infineon Technologies
Win Source Part Number: 1045961-IPP060N06NAK
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 17A (Ta), 45A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 36μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 2000pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
N-Channel 60V 17A (Ta), 45A (Tc) 3W (Ta), 83W (Tc) Through Hole PG-TO220-3
MOSFET TRANSISTOR, N CHANNEL, 45 A, 60 V, 0.0052 OHM, 10 V, 2.8 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET Transistor, N Channel, 45 A, 60 V, 0.0052 ohm, 10 V, 2.8 V RoHS Compliant: Yes
MOSFET N-CH 60V 17A/45A TO220-3
| Win Source Electronics | DigiKey | Radwell International | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1045961-IPP060N06NAKSA1 | IPP060N06NAKSA1-ND | 108044557 | 50Y2056 | IPP060N06NAKSA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP060N06NAKSA1 | Single FETs, MOSFETs | Transistor | Mosfet Transistor, N Channel, 45 A, 60 V, 0.0052 Ohm, 10 V, 2.8 V Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 60 volts | ||||
| PD | 3000 to 83000 milliwatts |
