Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP06N03LA IPP06N03LA

Manufacturer: Infineon Technologies
Win Source Part Number: 1045964-IPP06N03LA
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2V @ 40μA
Max Gate Charge: 22nC @ 5V
Max Input Capacitance: 2653pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.2 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

MOSFET N-CH 25V 50A TO220-3 Product overview: IPP06N03LA from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 50A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 50A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP06N03LA can be used for catalog matching and distributor lookup.

N-Channel 25V 50A (Tc) 83W (Tc) Through Hole PG-TO220-3