Infineon Technologies AG Single FETs, MOSFETs IPP080N06N G

N-Channel 60V 80A (Tc) 214W (Tc) Through Hole PG-TO220-3-1

MOSFET N-CH 60V 80A TO220-3 Product overview: IPP080N06N G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 80A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 80A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP080N06N G can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 776901-IPP080N06N G
Series: OptiMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete(EOL)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TO220-3-1
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 4V @ 150μA
Gate Charge (Qg) (Maximum) @ Vgs: 93nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3500pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 214W (Tc)
Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited