Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP070N06LG IPP070N06LG

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069044-IPP070N06LG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 214W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2V @ 150μA Max Gate Charge: 126nC @ 10V Max Input Capacitance: 4300pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP070N06LG - 069044-IPP070N06LG - Win Source Electronics
    Win Source Electronics
  • Power Field-Effect Transistor, 80A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN - 9152-IPP070N06LG - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 069044-IPP070N06LG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 214W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2V @ 150μA Max Gate Charge: 126nC @ 10V Max Input Capacitance: 4300pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP070N06LG - 069044-IPP070N06LG - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP070N06LG
069044-IPP070N06LG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP070N06LG 069044-IPP070N06LG
Manufacturer: Infineon Technologies Win Source Part Number: 069044-IPP070N06LG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 214W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2V @ 150μA Max Gate Charge: 126nC @ 10V Max Input Capacitance: 4300pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 069044-IPP070N06LG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 214W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2V @ 150μA
Max Gate Charge: 126nC @ 10V
Max Input Capacitance: 4300pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
60V 80A TO-220 MOSFET Transistor
285-IPP070N06LG
60V 80A TO-220 MOSFET Transistor 285-IPP070N06LG
MOSFET N-CH 60V 80A TO-220 Product overview: IPP070N06LG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 80A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 80A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP070N06LG can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 80A TO-220 Product overview: IPP070N06LG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 80A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 80A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP070N06LG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Power Field-Effect Transistor, 80A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN - 9152-IPP070N06LG - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Power Field-Effect Transistor, 80A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
9152-IPP070N06LG
Power Field-Effect Transistor, 80A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN 9152-IPP070N06LG
Power Field-Effect Transistor, 80A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Power Field-Effect Transistor, 80A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 069044-IPP070N06LG 285-IPP070N06LG 9152-IPP070N06LG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP070N06LG 60V 80A TO-220 MOSFET Transistor Power Field-Effect Transistor, 80A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 214000 milliwatts 214000 milliwatts
Unlock Full Specs
to access all available technical data