Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP22N03S4L-15 IPP22N03S4L-15

Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065292-IPP22N03S4L- 15 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Input Capacitance: 980 pF Power Dissipation: 31 W Number of Pins: 3 Rise Time: 2 ns Fall Time: 2 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220-3 Alternative Parts (Cross-Reference): FDMC7696; IRL2703PBF; IPP114N03L G; NTP65N02R; IRLB8721PBF; NTP65N02RGIPP22N03S4 L15AKSA1; Halogen Free: Halogen Free Popularity: Low Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 31 W Continuous Drain Current (ID): 22 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 12 ns Gate to Source Voltage (Vgs): 16 V Rds On Max: 14.9 mΩ Max Dual Supply Voltage: 30 V
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Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065292-IPP22N03S4L- 15 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Input Capacitance: 980 pF Power Dissipation: 31 W Number of Pins: 3 Rise Time: 2 ns Fall Time: 2 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220-3 Alternative Parts (Cross-Reference): FDMC7696; IRL2703PBF; IPP114N03L G; NTP65N02R; IRLB8721PBF; NTP65N02RGIPP22N03S4 L15AKSA1; Halogen Free: Halogen Free Popularity: Low Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 31 W Continuous Drain Current (ID): 22 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 12 ns Gate to Source Voltage (Vgs): 16 V Rds On Max: 14.9 mΩ Max Dual Supply Voltage: 30 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP22N03S4L-15 - 1065292-IPP22N03S4L-15 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP22N03S4L-15
1065292-IPP22N03S4L-15
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP22N03S4L-15 1065292-IPP22N03S4L-15
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065292-IPP22N03S4L- 15 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Input Capacitance: 980 pF Power Dissipation: 31 W Number of Pins: 3 Rise Time: 2 ns Fall Time: 2 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220-3 Alternative Parts (Cross-Reference): FDMC7696; IRL2703PBF; IPP114N03L G; NTP65N02R; IRLB8721PBF; NTP65N02RGIPP22N03S4 L15AKSA1; Halogen Free: Halogen Free Popularity: Low Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 31 W Continuous Drain Current (ID): 22 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 12 ns Gate to Source Voltage (Vgs): 16 V Rds On Max: 14.9 mΩ Max Dual Supply Voltage: 30 V

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1065292-IPP22N03S4L-15
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 30 V
Input Capacitance: 980 pF
Power Dissipation: 31 W
Number of Pins: 3
Rise Time: 2 ns
Fall Time: 2 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-220-3
Alternative Parts (Cross-Reference): FDMC7696; IRL2703PBF; IPP114N03L G; NTP65N02R; IRLB8721PBF; NTP65N02RGIPP22N03S4L15AKSA1;
Halogen Free: Halogen Free
Popularity: Low
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 31 W
Continuous Drain Current (ID): 22 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 12 ns
Gate to Source Voltage (Vgs): 16 V
Rds On Max: 14.9 mΩ
Max Dual Supply Voltage: 30 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1065292-IPP22N03S4L-15
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP22N03S4L-15
V(BR)DSS 30 volts
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