Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP110N06LG IPP110N06LG

Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065288-IPP110N06LG Current Rating: 78 A Mounting: SMD (SMT) Input Capacitance: 2.7 nF Power Dissipation: 158 W Rise Time: 19 ns Fall Time: 18 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220 Alternative Parts (Cross-Reference): IPP110N06LGIPP110N06 L G; Popularity: Low Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Lead Free: Yes RoHS: Compliant Min Operating Temperature: -55 °C Voltage Rating (DC): 60 V Element Configuration: Single Continuous Drain Current (ID): 78 A Drain to Source Breakdown Voltage: 60 V Turn-Off Delay Time: 45 ns Drain to Source Resistance: 11.3 mΩ Gate to Source Voltage (Vgs): 20 V
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Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065288-IPP110N06LG Current Rating: 78 A Mounting: SMD (SMT) Input Capacitance: 2.7 nF Power Dissipation: 158 W Rise Time: 19 ns Fall Time: 18 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220 Alternative Parts (Cross-Reference): IPP110N06LGIPP110N06 L G; Popularity: Low Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Lead Free: Yes RoHS: Compliant Min Operating Temperature: -55 °C Voltage Rating (DC): 60 V Element Configuration: Single Continuous Drain Current (ID): 78 A Drain to Source Breakdown Voltage: 60 V Turn-Off Delay Time: 45 ns Drain to Source Resistance: 11.3 mΩ Gate to Source Voltage (Vgs): 20 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP110N06LG - 1065288-IPP110N06LG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP110N06LG
1065288-IPP110N06LG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP110N06LG 1065288-IPP110N06LG
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065288-IPP110N06LG Current Rating: 78 A Mounting: SMD (SMT) Input Capacitance: 2.7 nF Power Dissipation: 158 W Rise Time: 19 ns Fall Time: 18 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220 Alternative Parts (Cross-Reference): IPP110N06LGIPP110N06 L G; Popularity: Low Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Lead Free: Yes RoHS: Compliant Min Operating Temperature: -55 °C Voltage Rating (DC): 60 V Element Configuration: Single Continuous Drain Current (ID): 78 A Drain to Source Breakdown Voltage: 60 V Turn-Off Delay Time: 45 ns Drain to Source Resistance: 11.3 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1065288-IPP110N06LG
Current Rating: 78 A
Mounting: SMD (SMT)
Input Capacitance: 2.7 nF
Power Dissipation: 158 W
Rise Time: 19 ns
Fall Time: 18 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-220
Alternative Parts (Cross-Reference): IPP110N06LGIPP110N06L G;
Popularity: Low
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
Lead Free: Yes
RoHS: Compliant
Min Operating Temperature: -55 °C
Voltage Rating (DC): 60 V
Element Configuration: Single
Continuous Drain Current (ID): 78 A
Drain to Source Breakdown Voltage: 60 V
Turn-Off Delay Time: 45 ns
Drain to Source Resistance: 11.3 mΩ
Gate to Source Voltage (Vgs): 20 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1065288-IPP110N06LG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP110N06LG
V(BR)DSS 60 volts
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