Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP065N03LG IPP065N03LG

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069038-IPP065N03LG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 2400pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 069038-IPP065N03LG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 2400pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP065N03LG - 069038-IPP065N03LG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP065N03LG
069038-IPP065N03LG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP065N03LG 069038-IPP065N03LG
Manufacturer: Infineon Technologies Win Source Part Number: 069038-IPP065N03LG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 2400pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 069038-IPP065N03LG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 56W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO220-3-1
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 2400pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 069038-IPP065N03LG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP065N03LG
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 56000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

 - 2EDN7533RXTMA1 - Rochester Electronics
Infineon Technologies AG
Specs
Package Type PG-TSSOP-8
Packing Method Tape Reel; Tape & Reel
View Details
 - LM5100ASD - Rochester Electronics
Specs
Package Type SOLCC10
Packing Method Tape Reel; Tape & Reel
View Details
2 suppliers
Dual N-Channel and Dual P-Channel Matched MOSFET Pair - ALD1103SBL - Advanced Linear Devices, Inc.
Specs
MOSFET Operating Mode Enhancement; Enhancement Mode
V(BR)DSS 12 volts
IDSS -16 to 40 milliamps
View Details
4 suppliers
Single FETs, MOSFETs - 1727-5888-ND - DigiKey
Specs
Polarity N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA
Transistor Grade / Operating Range Automotive
View Details
2 suppliers