Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP030N10NF2S IPP030N10NF2S

Description
StrongIRFET™ 2 single N-channel power MOSFET 100 V in TO-220 package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 3.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. Additonally it is intended as the better price performance product compared to the IRF100B201. Summary of Features Broad availability from distribution Excellent price/performance ratio Ideal for high & low switching frequency Industry standard through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout for drop-in replacement Increased current carrying capability Ease of manufacturing Applications Adapters and chargers Battery management systems (BMS) Light electric vehicles (LEV) Low power BDC/BLDC motor drives up to 72 V Motor Control
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP030N10NF2S - IPP030N10NF2S - Infineon Technologies AG
    Infineon Technologies AG
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Description
StrongIRFET™ 2 single N-channel power MOSFET 100 V in TO-220 package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 3.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. Additonally it is intended as the better price performance product compared to the IRF100B201. Summary of Features Broad availability from distribution Excellent price/performance ratio Ideal for high & low switching frequency Industry standard through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout for drop-in replacement Increased current carrying capability Ease of manufacturing Applications Adapters and chargers Battery management systems (BMS) Light electric vehicles (LEV) Low power BDC/BLDC motor drives up to 72 V Motor Control
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Datasheet
Datasheet Summary
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IPP030N10NF2S is an N-channel power MOSFET rated for 100 V drain-source voltage, with a maximum on-state resistance of 3.0 mΩ and a continuous drain current of 179 A at 25 °C. It is packaged in a PG-TO220-3 case with dimensions of 14.32-15.80 mm in length, 9.90-10.67 mm in width, and 6.00-6.70 mm in height. The device is 100% avalanche tested, RoHS compliant, and halogen-free according to IEC 61249-2-21, with a junction operating temperature range of -55 °C to 175 °C and thermal resistance junction-to-case of 0.6 °C/W.

Datasheet Summary
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IPP030N10NF2S is an N-channel power MOSFET rated for 100 V drain-source voltage, with a maximum on-state resistance of 3.0 mΩ and a continuous drain current of 179 A at 25 °C. It is packaged in a PG-TO220-3 case with dimensions of 14.32-15.80 mm in length, 9.90-10.67 mm in width, and 6.00-6.70 mm in height. The device is 100% avalanche tested, RoHS compliant, and halogen-free according to IEC 61249-2-21, with a junction operating temperature range of -55 °C to 175 °C and thermal resistance junction-to-case of 0.6 °C/W.

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP030N10NF2S - IPP030N10NF2S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP030N10NF2S
IPP030N10NF2S
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP030N10NF2S IPP030N10NF2S
StrongIRFET™ 2 single N-channel power MOSFET 100 V in TO-220 package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 3.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. Additonally it is intended as the better price performance product compared to the IRF100B201. Summary of Features Broad availability from distribution Excellent price/performance ratio Ideal for high & low switching frequency Industry standard through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout for drop-in replacement Increased current carrying capability Ease of manufacturing Applications Adapters and chargers Battery management systems (BMS) Light electric vehicles (LEV) Low power BDC/BLDC motor drives up to 72 V Motor Control

StrongIRFET™ 2 single N-channel power MOSFET 100 V in TO-220 package

Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 3.0 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Additonally it is intended as the better price performance product compared to the IRF100B201.


Summary of Features

  • Broad availability from distribution
  • Excellent price/performance ratio
  • Ideal for high & low switching frequency
  • Industry standard through-hole package
  • High current rating
  • Capable of wave-soldering

Benefits

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout for drop-in replacement
  • Increased current carrying capability
  • Ease of manufacturing

Applications

  • Adapters and chargers
  • Battery management systems (BMS)
  • Light electric vehicles (LEV)
  • Low power BDC/BLDC motor drives up to 72 V
  • Motor Control
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPP030N10NF2S
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP030N10NF2S
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0030 ohms
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