MOSFET N-CH 60V 20A/80A TO220-3
N-Channel 60V 20A (Ta), 80A (Tc) 3W (Ta), 107W (Tc) Through Hole PG-TO220-3
Win Source Part Number: 1018871-IPP040N06NAK
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 50µA
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000959820,IPP040N0
Base Product Number: IPP040
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
MOSFET N-CH 60V 20A/80A TO220-3 Product overview: IPP040N06NAKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 20A, 80A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 20A, 80A, TO220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP040N06NAKSA1 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 60V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 20A/80A TO220-3
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPP040N06NAKSA1 | 448-IPP040N06NAKSA1-ND | 1018871-IPP040N06NAKSA1 | 278-IPP040N06NAKSA1 | 12AC9723 | IPP040N06NAKSA1 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 60V 20A 80A TO220 MOSFET Transistor | Mosfet, N-Ch, 60V, 80A, To-220; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| IDSS | 20000 milliamps | 80000 milliamps | ||||
| PD | 3000 milliwatts | 3000 to 107000 milliwatts | 107 milliwatts |