The IPP037N08N3-G is an N-channel MOSFET designed for high-frequency switching and synchronous rectification in DC/DC converters. It is packaged in a PG-TO220-3 case and rated for a continuous drain current of 100 A at 25 °C and 100 A at 100 °C, with a pulsed drain current of 400 A. The maximum drain-source on-state resistance is 3.75 mΩ at 10 V gate voltage and 100 A drain current. It has a drain-source breakdown voltage of 80 V, a gate-source voltage rating of ±20 V, and is capable of withstanding a single-pulse avalanche energy of 510 mJ. The thermal resistance from junction to case is 0.7 K/W. The device is RoHS compliant, halogen-free per IEC61249-2-21, and qualified according to JEDEC standards for target applications. It is 100% avalanche tested.
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Summary of Features
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPP037N08N3-G |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0037 ohms |
